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Physics - Condensed Matter Physics | Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications

Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications

Franco, Jacopo, Kaczer, Ben, Groeseneken, Guido

2014, XIX, 187 p. 219 illus.

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  • Review of CMOS scaling trends beyond the conventional geometric scaling era, and of advanced NBTI measurement techniques and modeling attempts
  • Complete reliability study of the novel (Si)Ge channel quantum well pMOSFET technology, including extensive experimental datasets collected on a variety of processed 300mm wafers
  • Extensive experimental data are reported
  • The reliability study is extended to nanoscale devices
  • Appeals to researchers and professionals from the multidiscipline fields of Materials Science, Electrical Engineering and Physics

Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability.

This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated.

The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process- and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finFET) devices. We propose a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.

The improved reliability properties here discussed strongly support (Si)Ge technology as a clear frontrunner for future CMOS technology nodes.

Content Level » Research

Keywords » CMOS Technology Nodes - Channel Hot Carriers - Design Optimization - Device Reliability - Electron Device Reliability - High-mobility channel pMOS - Low Frequency Noise - Nanoscale Devices - Negative Bias Temperature Instability - Random Telegraph Noise (RTN) - Semiconductor Devices - SiGe Gate Stack

Related subjects » Applied & Technical Physics - Circuits & Systems - Condensed Matter Physics - Optical & Electronic Materials

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