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The Thermoballistic Transport Model

A Novel Approach to Charge Carrier Transport in Semiconductors

  • Book
  • © 2014

Overview

Authors:
  1. Reinhard Lipperheide

    1. Lise-Meitner-Campus Wannsee, Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Germany

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  2. Uwe Wille

    1. Lise-Meitner-Campus Wannsee, Helmholtz-Zentrum Berlin und Energie, Berlin, Germany

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  • Presents the thermoballistic approach as a novel and original way of calculations
  • Treats specific examples of current research in semiconductor physics and spintronics
  • Develops the formalism systematically, step-by-step, to make it easily comprehensible
  • Includes supplementary material: sn.pub/extras

Part of the book series: Springer Tracts in Modern Physics (STMP, volume 259)

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Table of contents (7 chapters)

  1. Front Matter

    Pages i-xi
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  2. Introduction

    • Reinhard Lipperheide, Uwe Wille
    Pages 1-4

  3. Drift-Diffusion and Ballistic Transport

    • Reinhard Lipperheide, Uwe Wille
    Pages 5-24

  4. Prototype Thermoballistic Model

    • Reinhard Lipperheide, Uwe Wille
    Pages 25-48

  5. Thermoballistic Approach: Concept

    • Reinhard Lipperheide, Uwe Wille
    Pages 49-82

  6. Thermoballistic Approach: Implementation

    • Reinhard Lipperheide, Uwe Wille
    Pages 83-109

  7. Examples

    • Reinhard Lipperheide, Uwe Wille
    Pages 111-137

  8. Summary and Outlook

    • Reinhard Lipperheide, Uwe Wille
    Pages 139-141

  9. Back Matter

    Pages 143-150
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Keywords

About this book

The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of "ballistic configurations" arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detail and specific examples of interest to current research in semiconductor physics and spintronics are worked out.

Authors and Affiliations

  • Lise-Meitner-Campus Wannsee, Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Germany

    Reinhard Lipperheide

  • Lise-Meitner-Campus Wannsee, Helmholtz-Zentrum Berlin und Energie, Berlin, Germany

    Uwe Wille

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