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Martin Wirnshofer received the Dipl.-Ing. degree in Electrical Engineering in 2007 from the Technische Universität München (TUM), Germany. His research on voltage reference circuits earned him the Outstanding Thesis Award by the German Association of Electrical Engineers (VDE). From 2007 to 2008 he was an analog designer with the Embedded Flash Memory Group at Infineon Technologies AG, Munich. Since 2008 he is a doctoral researcher at the Institute for Technical Electronics at TUM and has recently finished his Ph.D. project. He received the Excellence in Teaching Award by the Faculty of Electrical Engineering in 2010 and has authored and co-authored numerous international conference and journal publications. His research interests include low-power and low-voltage circuit design, adaptive circuit techniques and design methodologies for the nanoscale CMOS era. He is a member of the IEEE and the German Association of Electrical Engineers.
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