Overview
- Describes the use of interface control to maximize the potential of materials in nanoscale phenomena
- Introduces the combinatorial synthesis method for thin film growth used in the optimization of numerous multi-component functional materials
- Explains analysis methods combining angle-resolved measurements and hard x-ray photoelectron spectroscopy
Part of the book series: NIMS Monographs (NIMSM)
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Table of contents (7 chapters)
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Front Matter
Keywords
About this book
Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques.
The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. As he demonstrates, material development is the key to matching oxide materials to specific practical applications.
In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties using data obtained with non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Further, it shows how oxide materials can be used to support the development of future functional devices with high-k, ferroelectric, magnetic and optical properties. In closing, it explains optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure.
Authors and Affiliations
About the author
Takahiro Nagata is a Group Leader at the Research Center for Functional Materials, National Institute for Materials Science (NIMS). He received his Ph.D. from Osaka Prefecture University in 2003. He joined NIMS as a Researcher at the Advanced Electric Materials Center in 2006, was appointed a Senior Researcher in the Semiconductor Device Materials Group at MANA in 2011, and has served in his current position since 2018. He was also a Visiting Scientist at the Department of Materials, University of California Santa Barbara in 2008-2009. Currently he is also a Visiting Professor at the Graduate School of Science and Technology, Meiji University.
His work focuses on developing combinatorial synthesis systems and high-throughput characterization tools for screening candidate materials in the context of materials informatics. Most recently, he has begun expanding his focus to nanoelectronics materials, including wide band-gap semiconductors.
Bibliographic Information
Book Title: Nanoscale Redox Reaction at Metal/Oxide Interface
Book Subtitle: A Case Study on Schottky Contact and ReRAM
Authors: Takahiro Nagata
Series Title: NIMS Monographs
DOI: https://doi.org/10.1007/978-4-431-54850-8
Publisher: Springer Tokyo
eBook Packages: Chemistry and Materials Science, Chemistry and Material Science (R0)
Copyright Information: National Institute for Materials Science, Japan 2020
Softcover ISBN: 978-4-431-54849-2Published: 22 May 2020
eBook ISBN: 978-4-431-54850-8Published: 21 May 2020
Series ISSN: 2197-8891
Series E-ISSN: 2197-9502
Edition Number: 1
Number of Pages: XI, 89
Number of Illustrations: 12 b/w illustrations, 51 illustrations in colour
Topics: Surfaces and Interfaces, Thin Films, Semiconductors, Electronics and Microelectronics, Instrumentation, Nanotechnology