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Materials - Surfaces, Interfaces, Thin Films, Corrosion, Coatings | Material Design of Metal/Oxide Interfaces for Nanoelectronics Applications

Material Design of Metal/Oxide Interfaces for Nanoelectronics Applications

Series: NIMS Monographs

Nagata, Takahiro

2015, 70 p. 40 illus., 10 illus. in color.

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  • Describes interface control to maximize potential of materials in nanoscale phenomena
  • Introduces the combinatorial synthesis method for thin film growth used for the optimization of numerous multi-component functional materials
  • Explains the analysis methods combining angle-resolved measurements and the hard x-ray photoelectron spectroscopy

Oxide materials are good candidates to replace Si devices which are facing performance limits since these materials display unique properties, either due to their composition design and/or doping technique.
 
The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. Material development is the key to matching oxide materials to specific practical applications.

In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties with the data obtained using non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Oxide materials should support the development of future functional devices with High-k, ferroelectric, magnetic and optical properties. Optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure are also explained.

Content Level » Research

Keywords » Combinatorial Synthesis - Metal/oxide Interface - Plasma Surface Treatment - Resistive Random Access Memory - Schottky Contact - Surface Electron Accumulation Layer - X-ray Photoelectron Spectroscopy - X-ray Reflectometry

Related subjects » Condensed Matter Physics - Electronics & Electrical Engineering - Nanotechnology - Surfaces, Interfaces, Thin Films, Corrosion, Coatings

Table of contents 

Workfunction Control of Metal Contact on Oxide Semiconductors.- Schottky Contact Formation on Oxide Semiconductors.- Surface Passivation Effect on Schottky Contact.- Resistive Changing Behaviour of Metal/Oxide Structure.- Forming Process of Oxide Based ReRAM Device with Metal/Oxide Interface.- Summary.

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