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Describes interface control to maximize potential of materials in nanoscale phenomena
Introduces the combinatorial synthesis method for thin film growth used for the optimization of numerous multi-component functional materials
Explains the analysis methods combining angle-resolved measurements and the hard x-ray photoelectron spectroscopy
Oxide materials are good candidates to replace Si devices which are facing performance limits since these materials display unique properties, either due to their composition design and/or doping technique.
The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. Material development is the key to matching oxide materials to specific practical applications.
In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties with the data obtained using non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Oxide materials should support the development of future functional devices with High-k, ferroelectric, magnetic and optical properties. Optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure are also explained.
Workfunction Control of Metal Contact on Oxide Semiconductors.- Schottky Contact Formation on Oxide Semiconductors.- Surface Passivation Effect on Schottky Contact.- Resistive Changing Behaviour of Metal/Oxide Structure.- Forming Process of Oxide Based ReRAM Device with Metal/Oxide Interface.- Summary.