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Bismuth-Containing Compounds

  • Book
  • © 2013

Overview

Editors:
  1. Handong Li

    1. State Key Laboratory of Electronic Thin, University of Electronic Science and Technology of China, Chengdu, People's Republic of China

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  2. Zhiming M. Wang

    1. State Key Laboratory of Electronic, University of Electronic Science and Technology, Chengdu, People's Republic of China

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    You can also search for this editor in PubMed   Google Scholar

  • Features comprehensive coverage of novel bismuth-related materials and devices
  • Covers an emerging materials system with high potential for device applications
  • Written by leading experts in the corresponding research areas
  • Provides a foundation for the development of future optoelectronic, thermoelectric, and electronic devices

Part of the book series: Springer Series in Materials Science (SSMATERIALS, volume 186)

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Table of contents (15 chapters)

  1. Front Matter

    Pages i-xii
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  2. Dilute Bismides for Mid-IR Applications

    • Yuxin Song, Yi Gu, Jun Shao, Shumin Wang
    Pages 1-27

  3. Bismide-Based Photonic Devices for Near- and Mid-Infrared Applications

    • S. J. Sweeney, I. P. Marko, S. R. Jin, K. Hild, Z. Batool, N. Hossain et al.
    Pages 29-53

  4. Theory of the Electronic Structure of Dilute Bismide Alloys: Tight-Binding and k · p Models

    • Christopher A. Broderick, Muhammad Usman, Eoin P. O’Reilly
    Pages 55-88

  5. Dilute Bismuthides on an InP Platform

    • Yujun Zhong, Pernell Dongmo, Joshua Zide
    Pages 89-116

  6. Atmospheric-Pressure Metalorganic Vapor Phase Epitaxy of GaAsBi Alloy on GaAs Substrate

    • Hédi Fitouri, Ahmed Rebey, Belgacem El Jani
    Pages 117-139

  7. Group III–V Bismide Materials Grown by Liquid Phase Epitaxy

    • Sunanda Dhar
    Pages 141-165

  8. Spectroscopic Ellipsometry of AP-MOVPE-Grown GaAs1 − x Bi x Dilute Alloys

    • Nebiha Ben Sedrine
    Pages 167-179

  9. Effect of Bismuth Alloying on the Transport Properties of the Dilute Bismide Alloy, GaAs1 − x Bi x

    • Rajeev N. Kini, Angelo Mascarenhas
    Pages 181-200

  10. Localized States in GaAsBi and GaAs/GaAsBi Heterostructures

    • Masahiro Yoshimoto, Takuma Fuyuki
    Pages 201-224

  11. Unusual Bi-Containing Surface Layers of III–V Compound Semiconductors

    • Pekka Laukkanen, Marko Punkkinen
    Pages 225-261

  12. MBE Growth of Thin Hexagonal Films Bi2Te3, Bi2Se3, and Their Alloys on Cubic GaAs (001) Substrates

    • Xinyu Liu, Y. P. Chen, D. J. Smith, Y.-H. Zhang, C. Liu, M. Z. Hasan et al.
    Pages 263-279

  13. Vapor Phase Deposition Synthesis of Bismuth-Based Topological Insulator Nanoplates and Their Electrostatic Properties

    • Guolin Hao, Xiang Qi, Jianxin Zhong
    Pages 281-304

  14. Electronic and Optical Properties of Domain Walls and Phase Boundaries in Bismuth Ferrite

    • Jan Seidel
    Pages 305-320

  15. Syntheses and Properties of Some Bi-Containing Compounds with Noncentrosymmetric Structure

    • Wen-Dan Cheng, Chen-Sheng Lin, Lei Geng, Zhong-Zhen Luo, Wei-Long Zhang, Hao Zhang
    Pages 321-341

  16. Bismuth(V)-Containing Semiconductor Compounds and Applications in Heterogeneous Photocatalysis

    • Xiaofeng Chang, Mohammed Ashraf Gondal, Zain Hassan Abdallah Yamani, Guangbin Ji
    Pages 343-373

  17. Back Matter

    Pages 375-379
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Keywords

About this book

Bismuth-containing compounds comprise a relatively unexplored materials system that is expected to offer many unique and desirable optoelectronic, thermoelectric, and electronic properties for innovative device applications. This book serves as a platform for knowledge sharing and dissemination of the latest advances in novel areas of bismuth-containing compounds for materials and devices, and provides a comprehensive introduction to those new to this growing field.  Coverage of bismides includes theoretical considerations, epitaxial growth, characterization, and materials properties (optical, electrical, and structural). In addition to the well-studied area of highly mismatched Bi-alloys, the book covers emerging topics such as topological insulators and ferroelectric materials. Built upon fundamental science, the book is intended to stimulate interest in developing new classes of semiconductor and thermoelectric materials that exploit the properties of Bismuth. Application areas for bismide materials include laser diodes for optical communications, DVD systems, light-emitting diodes, solar cells, transistors, quantum well lasers, and spintronic devices.

Editors and Affiliations

  • State Key Laboratory of Electronic Thin, University of Electronic Science and Technology of China, Chengdu, People's Republic of China

    Handong Li

  • State Key Laboratory of Electronic, University of Electronic Science and Technology, Chengdu, People's Republic of China

    Zhiming M. Wang

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