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Crucial Issues in Semiconductor Materials and Processing Technologies

  • Book
  • © 1992

Overview

Editors:
  1. S. Coffa

    1. Physics Department, University of Catania, Catania, Italy

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  2. F. Priolo

    1. Physics Department, University of Catania, Catania, Italy

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  3. E. Rimini

    1. Physics Department, University of Catania, Catania, Italy

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  4. J. M. Poate

    1. AT&T Bell Laboratories, Murray Hill, USA

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Part of the book series: NATO Science Series E: (NSSE, volume 222)

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Table of contents (51 chapters)

  1. Front Matter

    Pages i-xix
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  2. Materials & Devices

    1. Front Matter

      Pages 1-1
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    2. Defect Aspects of Advanced Device Technologies

      • B. O. Kolbesen
      Pages 3-25

    3. Field Effect Analysis in Low Voltage Operation a-Si:H Thin Film Transistors with Very Thin Pecvd a-SiO2 Gate Dielectric

      • P. Foglietti, G. Fortunato, L. Mariucci, C. Reita
      Pages 27-31

    4. Silicon and Silicon:Germanium Alloy Growth; Means and Applications

      • Bernard S. Meyerson
      Pages 33-47

    5. Preparation and Characterization of Silicon Ribbons

      • S. Sivoththaman, M. Rodot
      Pages 49-53

    6. Rapid Thermal Chemical Vapor Deposition of SixGe1-x Alloys on Si and SiO2 and New Applications of SixGe1-x Alloys in Advanced Mosfet Processes

      • D. T. Grider, M. C. Öztürk, S. P. Ashburn, M. Sanganeria, J. J. Wortman
      Pages 55-59

    7. Kinetics and Dynamics of MBE Growth

      • B A Joyce
      Pages 61-77

    8. Effects of Near-Interface Defects on the Optical Properties of MBE Grown GaAs/AlGaAs Layers

      • M. Jaraiz
      Pages 79-82

    9. Optoelectronic Materials

      • M. Quillec
      Pages 83-101

    10. Electrical Characteristics of PECVD Silicon Nitride / Compound Semiconductor Interfaces for Optoelectronic Device Passivation

      • A. Piccirillo, P.E. Bagnoli
      Pages 103-107

  3. Processing Technologies

    1. Front Matter

      Pages 109-109
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    2. Fundamentals of Semiconductor Processing

      • L. C. Kimerling
      Pages 111-117

    3. Optical Analysis of Oxygen in Epitaxial Silicon

      • M. Geddo, B. Pivac
      Pages 119-127

    4. Electrical Properties of “Clean” and Fe — Decorated Stacking Faults in P-Type Silicon

      • B. Fiegl, G. Zoth
      Pages 129-133

    5. On the Dirty Contacts on N-Type Silicon

      • A. Castaldini, D. Cavalcoli, A. Cavallini
      Pages 135-139

    6. Mössbauer Study of the Dx-Center in Te-Implanted AlxGa1-xAs

      • H. Bemelmans, G. Borghs, G. Langouche
      Pages 141-145

    7. Surface Science and Semiconductor Processing

      • F. W. Saris
      Pages 147-152

    8. Lithography for Manufacturing at 0.25 Micrometer and Below

      • Henry I. Smith, M. L. Schattenburg
      Pages 153-166

    9. Basic Aspects of Ion Implantation

      • E. Rimini
      Pages 167-194
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Keywords

About this book

Semiconductors lie at the heart of some of the most important industries and technologies of the twentieth century. The complexity of silicon integrated circuits is increasing considerably because of the continuous dimensional shrinkage to improve efficiency and functionality. This evolution in design rules poses real challenges for the materials scientists and processing engineers. Materials, defects and processing now have to be understood in their totality. World experts discuss, in this volume, the crucial issues facing lithography, ion implication and plasma processing, metallization and insulating layer quality, and crystal growth. Particular emphasis is placed upon silicon, but compound semiconductors and photonic materials are also highlighted. The fundamental concepts of phase stability, interfaces and defects play a key role in understanding these crucial issues. These concepts are reviewed in a crucial fashion.

Editors and Affiliations

  • Physics Department, University of Catania, Catania, Italy

    S. Coffa, F. Priolo, E. Rimini

  • AT&T Bell Laboratories, Murray Hill, USA

    J. M. Poate

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