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Materials - Characterization & Evaluation of Materials | Helium Ion Microscopy - Principles and Applications

Helium Ion Microscopy

Principles and Applications

Joy, David C.

2013, VIII, 64 p. 29 illus., 16 illus. in color.

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  • Serves as a concise but authoritative introduction to the latest innovation in scanning microscopy
  • Compares ion and electron beams as options for microscopy
  • Presents a detailed physical model of ion-solid interactions and signal generation
  • Provides a detailed database of iSE yield behavior as a function of the target ion, element, and energy

Helium Ion Microscopy: Principles and Applications describes the theory and discusses the practical details of why scanning microscopes using beams of light ions – such as the Helium Ion Microscope (HIM) – are destined to become the imaging tools of choice for the 21st century. Topics covered include the principles, operation, and performance of the Gaseous Field Ion Source (GFIS), and a comparison of the optics of ion and electron beam microscopes including their operating conditions, resolution, and signal-to-noise performance. The physical principles of Ion-Induced Secondary Electron (iSE) generation by ions are discussed, and an extensive database of iSE yields for many elements and compounds as a function of incident ion species and its energy is included. Beam damage and charging are frequently outcomes of ion beam irradiation, and techniques to minimize such problems are presented. In addition to imaging, ions beams can be used for the controlled deposition, or removal, of selected materials with nanometer precision. The techniques and conditions required for nanofabrication are discussed and demonstrated. Finally, the problem of performing chemical microanalysis with ion beams is considered. Low energy ions cannot generate X-ray emissions, so alternative techniques such as Rutherford Backscatter Imaging (RBI) or Secondary Ion Mass Spectrometry (SIMS) are examined.

  • Serves as a concise but authoritative introduction to the latest innovation in scanning microscopy
  • Compares ion and electron beams as options for microscopy
  • Presents a detailed physical model of ion-solid interactions and signal generation
  • Provides a detailed database of iSE yield behavior as a function of the target ion, element, and energy

Content Level » Research

Keywords » Backscattered ion imaging - Detecting ion beam signals - HIM - HIM charging and damage - HIM with a GFIS - HIM with a GFIS, practical issues - Helium Ion Microscopy - Helium ion microscopy how-to - Helium ion microscopy operation - Helium ion microscopy user guide - Helium ion microscopy, introduction - Imaging depth of field - Ion channeling contrast - Ion Beam Induced Charging - Ion Beams - Ion Generated Damage - Ion Induced Secondary Electrons - Ion generated secondary electrons - Ion –Solid Interactions and Image Formation - Microanalysis with the HIM - Microscopy with ions, history of - Patterning and Nanofabrication, HIM - SE and iSE comparison - SE vs. iSE - Scanning Ion Beam Microscope - Scanning Transmission Ion Microscopy - Secondary Ion Mass Spectrometry - Sputter Damage - The interaction volume - Topographic contrast in the HIM - iSE

Related subjects » Analytical Chemistry - Characterization & Evaluation of Materials - Condensed Matter Physics - Nanotechnology - Optics & Lasers

Table of contents 

Chapter 1: Introduction to Helium Ion Microscopy
Chapter 2: Microscopy with Ions  - A brief history
Chapter 3: Operating the Helium Ion Microscope
Chapter 4: Ion –Solid  Interactions  and Image Formation
Chapter 5: Charging and  Damage
Chapter 6: Microanalysis with the HIM
Chapter 7: Ion Generated Damage
Chapter 8: Working with other Ion beams
Chapter 9: Patterning and Nanofabrication
Conclusion
Bibliography
Appendix: iSE Yields,  and IONiSE  parameters for  He+ excitation  of Elements and Compounds
Index

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