Logo - springer
Slogan - springer

Materials - Characterization & Evaluation of Materials | Ion Implantation: Basics to Device Fabrication

Ion Implantation: Basics to Device Fabrication

Rimini, Emanuele

1995, XIII, 393 p.

Available Formats:
eBook
Information

Springer eBooks may be purchased by end-customers only and are sold without copy protection (DRM free). Instead, all eBooks include personalized watermarks. This means you can read the Springer eBooks across numerous devices such as Laptops, eReaders, and tablets.

You can pay for Springer eBooks with Visa, Mastercard, American Express or Paypal.

After the purchase you can directly download the eBook file or read it online in our Springer eBook Reader. Furthermore your eBook will be stored in your MySpringer account. So you can always re-download your eBooks.

 
$219.00

(net) price for USA

ISBN 978-1-4615-2259-1

digitally watermarked, no DRM

Included Format: PDF

download immediately after purchase


learn more about Springer eBooks

add to marked items

Hardcover
Information

Hardcover version

You can pay for Springer Books with Visa, Mastercard, American Express or Paypal.

Standard shipping is free of charge for individual customers.

 
$284.00

(net) price for USA

ISBN 978-0-7923-9520-1

free shipping for individuals worldwide

usually dispatched within 3 to 5 business days


add to marked items

Softcover
Information

Softcover (also known as softback) version.

You can pay for Springer Books with Visa, Mastercard, American Express or Paypal.

Standard shipping is free of charge for individual customers.

 
$284.00

(net) price for USA

ISBN 978-1-4613-5952-4

free shipping for individuals worldwide

usually dispatched within 3 to 5 business days


add to marked items

  • About this book

Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci­ entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im­ planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is­ sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth­ ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.

Content Level » Research

Related subjects » Characterization & Evaluation of Materials - Inorganic Chemistry - Particle and Nuclear Physics

Table of contents 

Preface. List of Tables. 1. Semiconductor Devices. 2. Ion Implanters. 3. Range Distribution. 4. Radiation Damage. 5. Annealing and Secondary Defects. 6. Analytical Techniques. 7. Silicon Based Devices. 8. Ion Implantation in Compound Semiconductor and Buried Layer Synthesis. Selected References. References. Index.

Popular Content within this publication 

 

Articles

Read this Book on Springerlink

Services for this book

New Book Alert

Get alerted on new Springer publications in the subject area of Characterization and Evaluation of Materials.