Ehrentraut, Dirk, Meissner, Elke, Bockowski, Michal (Eds.)
2010, XX, 334p. 400 illus., 200 illus. in color.
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Summarizes the current state-of-the-art of GaN growth technology
Integrates materials science and physical aspects
A reference work for researchers and engineers alike
May serve as a study text for graduate students in materials sciences
This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academia report in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared.
Content Level »Research
Keywords »Ammonothermal growth - Crystal growth from solution - Gallium nitride (GaN) - Hydride vapor phase epitaxy (HVPE) - Properties of GaN - crystal - spectroscopy