Dhanaraj, G., Byrappa, K., Prasad, V., Dudley, M. (Eds.)
2010, XXXVIII, 1818p. 1251 illus. in color. With DVD.
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Provides the reader with the most complete state-of-the-art presentation on the basics and realization of crystal growth
Covers the major developments in crystal growth
Summarizes the most recent knowledge on theory and experimental realization of crystal growth
World-class contributing authors
Offers many insights and practical hints for crystal growth researchers and engineers
Over the years, many successful attempts have been made to describe the art and science of crystal growth. Most modern advances in semiconductor and optical devices would not have been possible without the development of many elemental, binary, ternary, and other compound crystals of varying properties and large sizes. The objective of the Springer Handbook of Crystal Growth is to present state-of-the-art knowledge of both bulk and thin-film crystal growth. The goal is to make readers understand the basics of the commonly employed growth processes, materials produced, and defects generated.
Almost 100 leading scientists, researchers, and engineers from 22 different countries from academia and industry have been selected to write chapters on the topics of their expertise. They have written 52 chapters on the fundamentals of bulk crystal growth from the melt, solution, and vapor, epitaxial growth, modeling of growth processes and defects, techniques of defect characterization as well as some contemporary special topics. This unique effort will provide readers with a fundamental understanding of crystal growth with the latest instrumentation and techniques available for crystal and thin-film fabrication.
It is written and compiled for professionals and practitioners, materials scientists, physicists, and chemists at universities and in industrial research and production.
Crystal growth and characterization fundamentals
Bulk crystal growth from the melt, solution, and vapor
Thin-film epitaxial growth
Modeling of growth processes
Defect formation and morphology
Crystalline material characterization and analysis
Covers basic concepts, materials, properties, and fabrication.
Contains over 1,200 color illustrations.
Numerous comprehensive tables.
Features exhaustive references to approved data.
Fully searchable DVD-ROM for quick access to data.
Content Level »Professional/practitioner
Keywords »Transmission electron microscopy - crystal - electron microscopy - liquid - microscopy - modeling - spectroscopy
Table of Contents
Part A: Fundamentals of Crystal Growth and Defect Formation
Chap. 1. Crystal Growth Techniques and Characterization (G. Dhanaraj, K. Byrappa, V. Prasad, M. Dudley)
Chap. 2. Nucleation at Surfaces, (I. Markov)
Chap. 3. Morphology of Crystals Grown from Solution (F. Abbona, D. Aquilano)
Chap. 4. Generation and Propagation of Defects During Crystal Growth (H. Klapper)
Chap. 5. Single Crystals Grown Under Unconstrained Conditions (I. Sunagawa)
Part B: Crystal Growth from Melt Techniques
Chap. 6. Defect Formation During Crystal Growth from the Melt (P. Rudolph)
Chap. 7. Indium Phosphide: Crystal Growth and Defect Control by Applying Steady Magnetic Fields (D. Bliss)
Chap. 8.Czochralski Silicon Single Crystals for Semiconductor and Solar Cell Applications (K. Kakimoto)
Chap. 9.Czochralski Growth of Oxide Photorefractive Crystals (E. Dieguez, J.L.Plaza, M. D. Aggarwal, A. K. Batra)
Chap. 10. Bulk Crystal Growth of Ternary III–V Semiconductors (P.S. Dutta)
Chap. 11. Growth/Characterization of Antimony-Based Narrow-Bandgap III–V Semiconductor Crystals (V.K. Dixit, H. L. Bhat)
Chap. 12. Crystal Growth of Oxides by Optical Floating Zone Technique (H. Dabkowska, A. Dabkowski)
Chap. 13. Laser-Heated Pedestal Growth of Oxide Fibers (M.R.B. Andreeta, C. Hernandes)
Chap. 14. Synthesis of Refractory Materials by Skull Melting Technique (V.V. Osiko, M.A. Borik, E.E. Lomonova)
Chap. 15. Crystal Growth of Laser Host Fluorides and Oxides (J. Xu, H. Li)
Chap. 16. Shaped Crystal Growth (V. Tatartchenko)
Part C: Solution Growth of Crystals
Chap. 17. Bulk Single Crystals Grown from Solution on Earth and in Microgravity (M. Aggarwal, A. Batra, R. Lal, B. Penn, D. Frazier)
Chap. 18. Hydrothermal Growth of Polyscale Crystals (K. Byrappa)Chap. 19. Hydrothermal and Ammonothermal Growth of ZnO and GaN (M.Callahan, Q.S. Chen)
Chap. 20. Stoichiometry and Domain Structure of KTP-Type Nonlinear Optical Crystals (M. Roth)
Chap. 21. High-Temperature Solution Growth: Application to Laser and NL Optical Crystals (J.J. Carvajal, M.C. Pujol, F. Díaz)
Chap. 22. Growth and Characterization of KDP and its Analogs (S.-L. Wang, X. Sun, X.-T. Tao)
Part D: Crystal Growth from Vapor
Chap. 23. Growth and Characterization of Silicon Carbide Crystals (G. Dhanaraj, B. Raghothamachar, M. Dudley)
Chap. 24. AlN Bulk Crystal Growth by Physical Vapor Transport (R. Dalmau, Z. Sitar)
Chap. 25. Growth of Single-Crystal Organic Semiconductors (C. Kloc, T. Siegrist, J. Pflaum)
Chap. 26. Growth of III-Nitrides with HVPE (C. Hemmingsson, B. Monemar, Y. Kumagai, A. Koukitu)
Chap. 27. Growth of Semiconductor Single Crystals from Vapor Phase (R. Dhanasekaran)
Part E: Epitaxial Growth and Thin Films
Chap. 28. Epitaxial Growth of Silicon Carbide by Chemical Vapor Deposition (I.B. Bhat)
Chap. 29. Liquid-Phase Electroepitaxy of Semiconductors (S. Dost)
Chap. 30. Epitaxial Lateral Overgrowth of Semiconductors (Z. R. Zytkiewicz)
Chap. 31. Liquid-Phase Epitaxy of Advanced Materials (C.F. Klemenz Rivenbark)
Chap. 32. Molecular-Beam Epitaxial Growth of HgCdTe (J.W. Garland, S. Sivananthan)
Chap. 33. Metalorganic Vapor-Phase Epitaxy of Diluted Nitrides and Arsenide Quantum Dots (U. Pohl)
Chap. 34. Formation of SiGe Heterostructures and Their Properties (Y. Shiraki, A. Sakai)
Chap. 35. Plasma Energetics in Pulsed Laser and Pulsed Electron Deposition (M. Strikovski, J. Kim, S. Kolagani)
Part F: Modeling of Crystal Growth and Defects
Chap. 36. Convection and Control in Melt Growth of Bulk Crystals (C.-W. Lan)
Chap. 37. Vapor Growth of III Nitrides (D. Cai, L. Zheng, H. Zhang)Chap. 38. Continuum-Scale Quantitative Defect Dynamics in Growing Czochralski Silicon