The fifteenth international conference on Microscopy of Semiconducting Materials took place in Cambridge, UK on 2-5 April 2007. It was organised by the Institute of Physics, with co-sponsorship by the Royal Microscopical Society and endorsement by the Materials Research Society. The conference focused upon the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy, scanning probe microscopy and X-ray-based methods.
Conference sessions concentrated on key topics including state-of-the-art studies in high resolution imaging and analytical electron microscopy, advanced scanning probe microscopy, scanning electron microscopy and focused ion beam applications, novel epitaxial layer phenomena, the properties of quantum nanostructures, III-nitride developments, GeSi/Si for advanced devices, metal-semiconductor contacts and silicides and the important effects of critical device processing treatments. Accordingly, this volume should be of direct interest to researchers in areas ranging from fundamental studies to electronic device assessment.
Envisaged contents: The main topic areas are as follows: The characterisation of as-grown semiconductors in both bulk and thin film forms. The study of nanostructures of all types from quantum dots, wires, etc to nanotubes. The investigation of lattice defect and impurity behaviour in semiconducting materials. The study of the effects of semiconductor processing treatments
- oxidation, nitridation, ion implantation, annealing, silicidation, etc. The assessment of finished electronic devices, including studies of the influence of structural defects upon their behaviour and important new design features such as high/low k dielectrics, etc. The state of the art in analytical technique development from advances in FEGTEM nanoanalysis to exploitation of FIB milling for specimen preparation. Special conference sessions focused attention on recent advances in a number of areas of particular current interest, for example: Developments in the use of high resolution imaging and analytical transmission electron microscopy
- studies of bulk material, layers and interfaces. Advances in FIB milling and nanofabrication. The nature of epitaxial layers, superlattices and quantum well, wire and dot structures
- strain relaxation, defect introduction, morphological distortion, self-organisation, luminescence. Wide bandgap semiconductors, especially III-nitrides. The structures of dislocations and defect boundaries in semiconductors. Advances in SiGe/Si for device structures such as HBTs, MOSFETs, terahertz emitters, etc. Metal-semiconductor contacts and silicides. The effects of processing treatments using both conventional and transient techniques. The exploitation of advanced scanning techniques
-SEM-EBIC, SEM-CL, etc
-STM, AFM, SCM, BEEM, etc