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Materials | Quantum Transport in Ultrasmall Devices - Proceedings of a NATO Advanced Study Institute on Quantum

Quantum Transport in Ultrasmall Devices

Proceedings of a NATO Advanced Study Institute on Quantum Transport in Ultrasmall Devices, held July 17–30, 1994, in II Ciocco, Italy

Proceedings of a NATO ASI held in Il Ciocco, Italy, July 17-30, 1994

Series: Nato Science Series B:, Vol. 342

Ferry, D., Grubin, H.L., Jacoboni, C., Jauho, A.-P. (Eds.)

1995, X, 544 p.

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The operation of semiconductor devices depends upon the use of electrical potential barriers (such as gate depletion) in controlling the carrier densities (electrons and holes) and their transport. Although a successful device design is quite complicated and involves many aspects, the device engineering is mostly to devise a "best" device design by defIning optimal device structures and manipulating impurity profIles to obtain optimal control of the carrier flow through the device. This becomes increasingly diffIcult as the device scale becomes smaller and smaller. Since the introduction of integrated circuits, the number of individual transistors on a single chip has doubled approximately every three years. As the number of devices has grown, the critical dimension of the smallest feature, such as a gate length (which is related to the transport length defIning the channel), has consequently declined. The reduction of this design rule proceeds approximately by a factor of 1. 4 each generation, which means we will be using 0. 1-0. 15 ). lm rules for the 4 Gb chips a decade from now. If we continue this extrapolation, current technology will require 30 nm design rules, and a cell 3 2 size < 10 nm , for a 1Tb memory chip by the year 2020. New problems keep hindering the high-performance requirement. Well-known, but older, problems include hot carrier effects, short-channel effects, etc. A potential problem, which illustrates the need for quantum transport, is caused by impurity fluctuations.

Content Level » Research

Related subjects » Electronics & Electrical Engineering - Materials - Optical & Electronic Materials - Optics & Lasers

Table of contents 

Lectures: Introduction to Quantum Transport; C. Jacoboni, D.K. Ferry. Traditional Modeling of Semiconductor Devices; C.M. Snowden. Quantum Confined Systems: Wells, Wires, and Dots; U. Rössler. Fabrication of Nanoscale Devices; M.A. Reed, J.W. Sleight. Artificial Impurities in Quantum Wires and Dots; A.S. Sachrajda, et al. Mesoscopic Devices-What Are They? T.J. Thornton. Trajectories in Quantum Transport; J.R. Barker. Two-dimensional Dynamics of Electrons Passing through a Point Contact; C. Jacoboni, et al. Localized Acoustic Phonons in Low Dimensional Structures; N.A. Bannov, et al. Contributed Papers: Vapor Etching of Beam-deposited Carbon on Silicon Dioxide Films; J.M. Ryan, et al. Electron Heating in GaAs Due to Electron-Electron Interactions; B. Brill, M. Beiblum. Transport and Optical Spectroscopy of an Array of Quantum Dots with Strong Coulomb Correlations; C.A. Stafford, S. Das Sarma. Three Dimensional Quantum Transport Simulations of Transmission Fluctuations in a Quantum Dot; S.K. Kirby, et al. Acoustic Scattering of Electrons in a Narrow Quantum Well; A. Matulionis, C. Jacoboni. Nonohmic Phononassisted Landauer Resistance V.L. Gurevich, et al. Acoustic Phonon Relaxation in Valence Band Quantum Wells; G. Edwards, et al. 28 additional articles. Index.

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