Physical Properties of Amorphous Materials

1. Front Matter

   Pages i-xiii

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2. Introduction

   1. Introduction

      • David Adler, Brian B. Schwartz, Martin C. Steele

      Pages 1-4

3. General Properties

   1. Chemistry and Physics of Covalent Amorphous Semiconductors

      • David Adler

      Pages 5-103

   2. Fundamentals of Amorphous Materials

      • Stanford R. Ovshinsky

      Pages 105-155

4. Structure

   1. The Constraint of Discord

      • D. Weaire

      Pages 157-169

   2. Structural Studies of Amorphous Materials

      • Arthur Bienenstock

      Pages 171-200

   3. EXAFS of Disordered Systems

      • E. A. Stern

      Pages 201-219

   4. Mössbauer Spectroscopy—A Rewarding Probe of Morphological Structure of Semiconducting Glasses

      • Punit Boolchand

      Pages 221-260

   5. Dislocation Mediated Pseudo-Melting at Silicon-Metal Interfaces

      • B. K. Chakraverty

      Pages 261-275

5. Phonons

   1. Vibrational Properties of Amorphous Solids

      • Gerald Lucovsky

      Pages 277-312

6. Electronic Structure

   1. Density of States in Noncrystalline Solids

      • H. Fritzsche

      Pages 313-341

   2. Problems Relating to the Electronic Structure of Amorphous Semiconductors

      • Morrel H. Cohen

      Pages 343-359

7. Nonequilibrium Effects

   1. Nonequilibrium Transport Processes in Amorphous and Other Low Conductivity Materials

      • Heinz K. Henisch

      Pages 361-379

   2. The Peculiar Motion of Electrons in Amorphous Semiconductors

      • Marc A. Kastner

      Pages 381-396

   3. Geminate Recombination and Injection Currents: Diagnostics for Extended State Mobility

      • M. Silver

      Pages 397-421

   4. Light-Induced Effects in Hydrogenated Amorphous Silicon Alloys

      • S. Guha

      Pages 423-438

8. Back Matter

   Pages 439-443

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The Institute for Amorphous Studies was founded in 1982 as the international center for the investigation of amorphous mate­ rials. It has since played an important role in promoting the und er­ standing of disordered matter in general. An Institute lecture series on "Fundamentals of Amorphous Materials and Devices" was held during 1982-83 with distinguished speakers from universities and industry. These events were free and open to the public ,and were attended by many representatives of the scientific community. The lectures themselves were highly successful inasmuch as they provided not only formal instruction but also an opportunity for vigorous and stimulating debate. That last element could not be captured within the pages of a book I but the lectures concentrated on the latest advances in the field I which is why their essential contents are he re reproduced in collective form. Together they constitute an interdisciplinary status report of the field. The speakers brought many different viewpoints and a variety of back­ ground experiences io bear on the problems involved I but though language and conventions vary I the essential unity of the concerns is very clear I as indeed are the ultimate benefits of the many-sided approach.

• Mössbauer spectroscopy
• alloy
• crystal
• electrons
• semiconductors
• spectroscopy

• Massachusetts Institute of Technology, Cambridge, USA

  David Adler

• Institute for Amorphous Studies, Bloomfield Hills, USA

  Brian B. Schwartz, Martin C. Steele

• Brooklyn College of the City University of New York, Brooklyn, USA

  Brian B. Schwartz

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