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Editors

Editor-in-Chief

Enis Cetin
University of Illinois at Chicago, USA and Bilkent University, Turkey
aecyy@uic.edu

Founding Editor

Murat Kunt

EPFL / STI / ITS, Lausanne, Switzerland

Honorary Editorial Board Members

F. Castanie, ENSEEIHT-IRIT, France
B. Girod, Stanford University, USA
M. A. Lagunas-Hernandez, Barcelona, Spain
Y. Neuvo, Aalto University, Finland
A. Prochazka, University of Chemistry and Technology in Prague, Czech Republic
L. L. Scharf, Colorado State University, USA
G. Sicuranza, University of Trieste, Italy
C. Y. Suen, Concordia University, Canada
S. Van Huffel, KU Leuven, Belgium

Associate Editors

A. Abaza,
United States Patent and Trademark Office, USA
A. Alasfour, Kuwait University, Kuwait
G. Anbarjafari, iCV Research Group, University of Tartu, Estonia
H. F. Ates, Isik University, Turkey
P. Athavale, Clarkson University, USA
U. Meyer-Baese, Florida State University, USA
S. Behesti, Ryerson University, Canada
J. Cai, Google, USA
F. Castanie, ENSEEIHT-IRIT, France
T. Celik, University of the Witwatersrand, South Africa
L. Celona, University of Milano-Bicocca, Italy
H. Charvatova, Tomas Bata University in Zlin, Czech Republic
R. Cong, Beijing Jiaotong University, China
G. Cui, University of Electronic Science and Technology of China, China
B. Fan, University of Science and Technology Beijing, China
A. Farina, Leonardo Company, Italy
P. Flandrin, Centre National de la Recherche Scientifique, France
P. Frossard, EPFL, Switzerland
M. Gabbouj, Tampere University of Technology, Finland
L. Gelman, University of Huddersfield, UK
U. Gudukbay, Bilkent University, Turkey
S. Guo, University of Electronic Science and Technology of China
C. Hao, Institute of Acoustics, Chinese Academy of Sciences, China
F. Hartung, FH Aachen, Germany
M. Kaleem,  University of Management and Technology, Pakistan
H. R. Karimi, Politecnico di Milano, Italy
S. Kiranyaz, Qatar University, Qatar
K. Kose, Memorial Sloan Kettering Cancer Center, USA
H. Kusetogullari, Blekinge Institute of Technology, Sweden
X. Lan, Hong Kong Baptist University, Hong Kong
C. Larabi, Université de Poitiers, France
M. P. Malumbres, Universidad Miguel Hernandez, Spain
M. Oszust, Rzeszow University of Technology, Poland
S. Paheding, Fairfield University, USA
H. Pan, Northwestern University, USA
J-C. Pesquet, University Paris-Saclay, France
I. Pitas, Aristotle University of Thessaloniki, Greece
L. Roveda, Università della Svizzera, Viganello, Switzerland
P. Regalia, National Science Foundation, USA
E. Ribeiro, Florida Institute of Technology, USA
J. Steckenrider, United States Military Academy
J. P. Thiran, EPFL, Switzerland
B. U. Töreyin, İstanbul Technical University, Turkey
B. Torresani, Institut de Mathématiques de Marseille, France
A. B. Tosun, University of Pittsburgh, USA
O. Toygar, Eastern Mediterranean University, Cyprus
M. Trocan, Institut Superieur d'Electronique de Paris, France
L. Wang, University of North Carolina at Chapel Hill, USA
D. Wu, Jimei University, China
I. Yamada, Tokyo Institute of Technology, Japan
C. E. Yarman, Schlumberger Riboud Product Centre (SRPC), Clamart, France
D. Zhang, Zhejiang University of Technology, China
W. Zhang, Xidian University, China
W. Zhou, University of Waterloo, Canada 
Q. Zou, Wuhan University, China

 

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