Journal of Computational Electronics - Special Issue on Numerical Simulation of Optoelectronic Devices
Description
Optoelectronic devices that are based on the combination of taylored optical and electronic properties are ubiquitous in the technologies that enable our modern lifestyle, such as light emitting diodes in displays and lighting applications, solar cells for sustainable electricity production, photodetectors for metrology, sensing and optical data communication, electro-optical modulators, and lasers for telecommunication, scanning, metrology, and optical spectroscopy. Many of the device architectures used to implement the target functionality rely on complex hetero- and nanostructure arrangements, or novel materials with unusual optoelectronic properties. As performance is improved and requirements on the optoelectronic figures of merit increase, loss analysis and device optimization requires not only an advanced understanding and control of structure-property relations, but also efficient computational tools able to accurately model the complex behavior as a function of device configuration, thereby enabling directed optimization of performance, and linking scales from the atomic level to the device and system level. This JCEL Special Issue intends to review the state-of-the-art in the numerical simulation of advanced optoelectronic devices, from the material to device scale. Both method/tool development and application papers are welcome, as long as the intertwined aspects of optics and charge carrier dynamics are addressed.
Candidate device technologies include:
• Photovoltaics (PV): high-efficiency crystalline-Si (passivated contacts: heterojunction, TOPCon), thin-film (CIGS, CdTe, kesterites, etc.), perovskite (mobile ions, photon recycling), OPV (excitons), nanostructures (Quantum Dot (QD), Quantum Well (QW), Quantum Wire (QWR), 2D materials), beyond Shockley-Queisser (multi-junction architectures, multi-exciton generation, hot carriers, intermediate band, up-/downconversion, bulk PV effect), etc.
• Light emitting diodes: OLED (light out-coupling, dipole radiation, thermally activated delayed fluorescence, blue emitters etc.), QD-LED (colloidal, self-assembled, perovskites, etc.), inorganic (nitrides, QW, QD, random alloy fluctuations, ...), 2D-materials (VdW, etc.), adressing the green-gap and droop, micro- and nano-LEDs and arrays, UV and deep-UV, single photon emitters, etc.
• Photodetectors: QD, 2D materials, organic, III-V, thin-film, superlattice (type-II, broken gap), IR and THz, UV, polarization-sensitive detectors, avalanche and single-photon detectors, etc. • Laser diodes: Quantum cascade lasers, interband QW-laser, QD lasers, deep uv lasers, etc.
• Modulators and optical computing: electro-optical Mach-Zehnder interferometers, meta-materials, etc. Of particular interest are approaches to include the effects of confinement or non-classical behavior arising at hetero-interfaces and at nanoscale dimensions of functional device components, but also the numerical treatment of advanced topics in light-matter interactions, such as excitonics, photon recycling, and strong coupling. The discussion of the simulation approaches should also address model parametrization and a critical assessment of the boundaries of model accuracy and validity.
Submission Deadline: August 31, 2024
Guest Editors:
Dr. Urs Aeberhard - Fluxim AG and ETH Zurich, Switzerland
Prof. Matthias Auf der Maur - University of Rome “Tor Vergata," Italy