3D TCAD Simulation for CMOS Nanoeletronic Devices

1. Front Matter

   Pages i-xiii

   PDF

2. Introduction of Synopsys Sentaurus TCAD Simulation

   • Yung-Chun Wu, Yi-Ruei Jhan

   Pages 1-17

3. 2D MOSFET Simulation

   • Yung-Chun Wu, Yi-Ruei Jhan

   Pages 19-90

4. 3D FinFET with L _g = 15 nm and L _g = 10 nm Simulation

   • Yung-Chun Wu, Yi-Ruei Jhan

   Pages 91-183

5. Inverter and SRAM of FinFET with L _g = 15 nm Simulation

   • Yung-Chun Wu, Yi-Ruei Jhan

   Pages 185-210

6. Gate-All-Around (GAA) NWFET with L _g = 10 nm Simulation

   • Yung-Chun Wu, Yi-Ruei Jhan

   Pages 211-236

7. Junctionless FET with L _g = 10 nm Simulation

   • Yung-Chun Wu, Yi-Ruei Jhan

   Pages 237-255

8. Steep Slope Tunnel FET Simulation

   • Yung-Chun Wu, Yi-Ruei Jhan

   Pages 257-278

9. Extremely Scaled Si and Ge to L _g = 3-nm FinFETs and L _g = 1-nm Ultra-Thin Body Junctionless FET Simulation

   • Yung-Chun Wu, Yi-Ruei Jhan

   Pages 279-303

10. Back Matter

    Pages 305-330

    PDF

This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal–oxide–semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the built-in examples of Sentaurus TCAD 2014, the practical cases presented here, based on years of teaching and research experience, are used to interpret and analyze simulation results of the physical and electrical properties of designed 3D CMOSFET (metal–oxide–semiconductor field-effect transistor) nanoelectronic devices.

The book also addresses in detail the fundamental theory of advanced semiconductor device design for the further simulation and analysis of electric and physical properties of semiconductor devices. The design and simulation technologies for nano-semiconductor devices explored here are more practical in nature and representative of the semiconductor industry, and as such can promote the development of pioneering semiconductor devices, semiconductor device physics, and more practically-oriented approaches to teaching and learning semiconductor engineering. 

The book can be used for graduate and senior undergraduate students alike, while also offering a reference guide for engineers and experts in the semiconductor industry. Readers are expected to have some preliminary knowledge of the field.

• Semiconductor Design Textbook
• TCAD for Semiconductor Devices
• 3D Simulation of Semiconductor Processes
• Nanoeletronic Devices
• Simulation Analysis
• Nano-Semiconductor

• Dep. of Engi. and System Sci., National Tsing Hua University , Hsinchu, Taiwan, China

  Yung-Chun Wu

• National Tsing Hua University, Department of Engineering and System Sci National Tsing Hua University, Hsinchu, Taiwan

  Yi-Ruei Jhan

Dr. Yung-Chun Wu received his B.S. degree in Physics from National Central University in 1996, his M.S. degree in Physics from National Taiwan University in 1998, and his Ph.D. from National Chiao Tung University, Taiwan, in 2005. From 1998 to 2002, he was an assistant researcher at National Nano Device Laboratories, Hsinchu, Taiwan, where he was primarily engaged in research on single electron transistor and electron beam lithography technology. In 2006, he joined the Department of Engineering and System Science, National Tsing-Hua University, Hsinchu, Taiwan, where he is currently working as an associate professor. He teaches 3D CMOS semiconductor nanoelectronic devices by TCAD simulation course for seven years. His research interests include nanoelectronic devices and 3D TCAD simulation, flash memory devices, and solar cells. He has published 56 international SCI papers on nanoelectronic devices.

Yi-Ruei Jhan received the B.S. degree in Physics from National Dong Hwa University in 2010, M. S. degree in Engineering and System Science from National Tsing Hua University in 2012, and Ph.D. degree in Engineering and System Science from National Tsing Hua University in 2015. In 2016, he joined the Research and Development department of Taiwan Semiconductor Manufacturing Company (TSMC) after his graduation. His research interests include Nanoelectronic MOSFET devices, TCAD simulation and Nonvolatile memory devices. He is author of book: 3D TCAD Simulation for CMOS Nanoeletronic Devices.

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