Overview
- Offers an insightful overview of the key techniques in variation-immune CMOS device designs
- Covers the main contemporary issues in CMOS device design, such as how to overcome process-induced random variations including line-edge-roughness, random-dopant-fluctuation, and work-function variation
- Describes the applications of novel CMOS devices to static random access memory (SRAM)
- Includes supplementary material: sn.pub/extras
Part of the book series: Springer Series in Advanced Microelectronics (MICROELECTR., volume 56)
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Table of contents (8 chapters)
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Front Matter
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Understanding of Process-Induced Random Variation
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Front Matter
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Variation-Aware Advanced CMOS Devices
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Front Matter
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Static Random Access Memory (SRAM) Based on Advanced CMOS Devices
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Front Matter
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Keywords
About this book
This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM.
The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development.This book aims to provide the reader with a deep understanding of the major random variation sources, and the characterization of each random variation source. Furthermore, the book presents various CMOS device designs to surmount the random variation in future CMOS technology, emphasizing the applications to SRAM.
Authors and Affiliations
About the author
Bibliographic Information
Book Title: Variation-Aware Advanced CMOS Devices and SRAM
Authors: Changhwan Shin
Series Title: Springer Series in Advanced Microelectronics
DOI: https://doi.org/10.1007/978-94-017-7597-7
Publisher: Springer Dordrecht
eBook Packages: Physics and Astronomy, Physics and Astronomy (R0)
Copyright Information: Springer Science+Business Media Dordrecht 2016
Hardcover ISBN: 978-94-017-7595-3Published: 16 June 2016
Softcover ISBN: 978-94-024-1390-8Published: 07 June 2018
eBook ISBN: 978-94-017-7597-7Published: 06 June 2016
Series ISSN: 1437-0387
Series E-ISSN: 2197-6643
Edition Number: 1
Number of Pages: VII, 140
Number of Illustrations: 17 b/w illustrations, 101 illustrations in colour
Topics: Electronic Circuits and Devices, Circuits and Systems, Semiconductors, Electronics and Microelectronics, Instrumentation