Early Stages of Oxygen Precipitation in Silicon

1. Front Matter

   Pages i-xviii

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2. Oxygen-Related Defects in Silicon: Studies Using Stress-Induced Alignment

   • G. D. Watkins

   Pages 1-18

3. The Initial Stages of Oxygen Aggregation in Silicon: Dimers, Hydrogen and Self-Interstitials

   • R. C. Newman

   Pages 19-39

4. Infrared Studies of the Early Stages of Oxygen Clustering in Silicon

   • J. L. Lindström, T. Hallberg

   Pages 41-60

5. Magnetic Resonance Investigations of Thermal Donors in Silicon

   • C. A. J. Ammerlaan, I. S. Zevenbergen, Yu. V. Martynov, T. Gregorkiewicz

   Pages 61-82

6. Magnetic Resonance of Heat Treatment Centres in Silicon

   • J. M. Spaeth

   Pages 83-101

7. Effect of Hydrogen on Oxygen-Related Defect Reactions in Silicon at Elevated Temperatures

   • V. P. Markevich, I. F. Medvedeva, L. I. Murin

   Pages 103-122

8. Passivation of Thermal Donors by Atomic Hydrogen

   • Jörg Weber, Dirk I Bohne

   Pages 123-140

9. Oxygen-Carbon, Oxygen-Nitrogen and Oxygen-Dimer Defects in Silicon

   • C. P. Ewels, R. Jones, S. Öberg

   Pages 141-162

10. The Role of Trivalent Oxygen in Electrically Active Complexes

    • Peter Deák

    Pages 163-177

11. Hydrogen - Oxygen Interactions in Silicon

    • Stefan K. Estreicher, Young K. Park, Peter A. Fedders

    Pages 179-195

12. Oxygen Diffusion in Silicon: The Influence of Hydrogen

    • M. Ramamoorthy, S. T. Pantelides

    Pages 197-205

13. Generation of Thermal Donors, Nitrogen-Oxygen Complexes and Hydrogen-Oxygen Complexes in Silicon

    • M. Suezawa

    Pages 207-221

14. The Electronic Structure of the Oxygen Donor in Silicon from Piezospectroscopy

    • Michael Stavola

    Pages 223-242

15. Low-Temperature Diffusion and Agglomeration of Oxygen in Silicon

    • U. Gösele, E. Schroer, P. Werner, T. Y. Tan

    Pages 243-261

16. Roles of Structural Defects and Contaminants in Oxygen Precipitation in Silicon

    • K. Sumino

    Pages 263-282

17. Various Forms of Isolated Oxygen in Semiconductors

    • B. Pajot

    Pages 283-302

18. Oxygen-Related Luminescence Centres Created in Czochralski Silicon

    • E. C. Lightowlers, Gordon Davies

    Pages 303-318

19. The Nitrogen-Pair Oxygen Defect in Silicon

    • F. Berg Rasmussen, S. Öberg, R. Jones, C. Ewels, J. Goss, J. Miro et al.

    Pages 319-327

20. Thermal Double Donors in Silicon: A New Insight into the Problem

    • L. I. Murin, V. P. Markevich

    Pages 329-336

It was fOlllld as long ago as 1954 that heating oxygen rich silicon to around 450°C produced electrical active defects - the so called thermal donors. The inference was that the donors were created by some defect produced by the aggregation of oxygen. Since then, there has been an enor­ mous amount of work carried out to elucidate the detailed mechanism by which they, and other defects, are generated. This task has been made all the more relevant as silicon is one of the most important technological ma­ terials in everyday use and oxygen is its most common impurity. However, even after forty years, the details of the processes by which the donors and other defects are generated are still obscure. The difficulty of the problem is made more apparent when it is realised that there is only one oxygen atom in about ten thousand silicon atoms and so it is difficult to devise experiments to 'see' what happens during the early stages of oxygen precipitation when complexes of two, three or four 0xygen atoms are formed. However, new important new findings have emerged from experiments such as the careful monitoring of the changes in the infra­ red lattice absorption spectra over long durations, the observation of the growth of new bands which are correlated with electronic infra-red data, and high resolution ENDOR studies. In addition, progress has been made in the improved control of samples containing oxygen, carbon, nitrogen and hydrogen.

• Magnetic Resonance
• crystal
• modeling
• semiconductors
• spectroscopy

• Department of Physics, University of Exeter, Exeter, UK

  R. Jones

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