Advanced Physical Models for Silicon Device Simulation

1. Front Matter

   Pages I-XVIII

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2. Simulation of Silicon Devices: An Overview

   • Andreas Schenk

   Pages 1-126

3. Mobility Model for Hydrodynamic Transport Equations

   • Andreas Schenk

   Pages 127-169

4. Advanced Generation-Recombination Models

   • Andreas Schenk

   Pages 170-251

5. Metal-Semiconductor Contact

   • Andreas Schenk

   Pages 252-280

6. Modeling Transport Across Thin Dielectric Barriers

   • Andreas Schenk

   Pages 281-315

7. Summary and Outlook

   • Andreas Schenk

   Pages 316-319

8. Back Matter

   Pages 320-354

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Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation. Towards these goals the quality of the physical models is decisive. The introductory chapter of this book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work an extensive collection of widely used models is discussed in terms of physical accuracy and application results. This review shows that the quality and efficiency of the phys­ ical models, which have been developed for the purpose of numerical simulation over the last three decades, is sufficient for many applications. Nevertheless, the basic understanding of the microscopic processes, as well as the uniqueness and accuracy of the models are still unsatisfactory. Hence, the following chapters of the book deal with the derivation of physics-based models from a microscopic level, also using new approaches of "taylored quantum-mechanics". Each model is compared with experimental data and applied to a number of simulation exam­ ples. The problems when starting from "first principles" and making the models suitable for a device simulator will also be demonstrated. We will show that demands for rapid computation and numerical robustness require a compromise between physical soundness and analytical simplicity, and that the attainable accuracy is limited by the complexity of the problems.

• Diffusion
• EPROM
• PROM
• REM
• ROM
• mechanics
• model
• modeling
• physical model
• quantum mechanics
• semiconductor
• silicon device
• simulation
• transport equation

"... this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field who wants to know what can and cannot be done, and a useful source of reference for experienced users ...” Microelectronics Journal

• Institut für Integrierte Systeme, ETH Zürich, Schweiz

  Andreas Schenk

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