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Semiconductor Physics

An Introduction

  • Book
  • © 1982

Overview

Authors:
  1. Karlheinz Seeger

    1. Ludwig Boltzmann Institut für Festkörperphysik, Wien, Austria
      Institut für Festkörperphysik, Universität Wien, Wien, Austria

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Part of the book series: Springer Series in Solid-State Sciences (SSSOL, volume 40)

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Table of contents (15 chapters)

  1. Front Matter

    Pages I-XII
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  2. Elementary Properties of Semiconductors

    • Karlheinz Seeger
    Pages 1-9

  3. Energy Band Structure

    • Karlheinz Seeger
    Pages 10-33

  4. Semiconductor Statistics

    • Karlheinz Seeger
    Pages 34-45

  5. Charge and Energy Transport in a Nondegenerate Electron Gas

    • Karlheinz Seeger
    Pages 46-112

  6. Carrier Diffusion Processes

    • Karlheinz Seeger
    Pages 113-152

  7. Scattering Processes in a Spherical One-Valley Model

    • Karlheinz Seeger
    Pages 153-213

  8. Charge Transport and Scattering Processes in the Many-Valley Model

    • Karlheinz Seeger
    Pages 214-255

  9. Carrier Transport in the Warped-Sphere Model

    • Karlheinz Seeger
    Pages 256-269

  10. Quantum Effects in Transport Phenomena

    • Karlheinz Seeger
    Pages 270-290

  11. Impact Ionization and Avalanche Breakdown

    • Karlheinz Seeger
    Pages 291-301

  12. Optical Absorption and Reflection

    • Karlheinz Seeger
    Pages 302-385

  13. Photoconductivity

    • Karlheinz Seeger
    Pages 386-401

  14. Light Generation by Semiconductors

    • Karlheinz Seeger
    Pages 402-416

  15. Properties of the Surface

    • Karlheinz Seeger
    Pages 417-426

  16. Miscellaneous Semiconductors

    • Karlheinz Seeger
    Pages 427-433

  17. Back Matter

    Pages 434-464
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Keywords

About this book

The first edition of "Semiconductor Physics" was published in 1973 by Springer-Verlag Wien-New York as a paperback in the Springer Study Edition. In 1977, a Russian translation by Professor Yu. K. Pozhela and coworkers at Vilnius/USSR was published by Izdatelstvo "MIR", Mo­ scow. Since then new ideas have been developed in the field of semi­ conductors such as electron hole droplets, dangling bond saturation in amorphous silicon by hydrogen, or the determination of the fine struc­ ture constant from surface quantization in inversion layers. New tech­ niques such as molecular beam epitaxy which has made the realization of the Esaki superlattice possible, deep level transient spectroscopy, and refined a. c. Hall techniques have evolved. Now that the Viennese edition is about to go out of print, Springer-Verlag, Berlin-Heidelberg-New York is giving me the opportunity to include these new subjects in a monograph to appear in the Solid-State Sciences series. Again it has been the intention to cover the field of semiconductor physics comprehensively, although some chapters such as diffusion of hot carriers and their galvanomagnetic phenomena, as well as super­ conducting degenerate semiconductors and the appendices, had to go for commercial reasons. The emphasis is more on physics than on device as­ pects.

Authors and Affiliations

  • Ludwig Boltzmann Institut für Festkörperphysik, Wien, Austria

    Karlheinz Seeger

  • Institut für Festkörperphysik, Universität Wien, Wien, Austria

    Karlheinz Seeger

Bibliographic Information

  • Book Title: Semiconductor Physics

  • Book Subtitle: An Introduction

  • Authors: Karlheinz Seeger

  • Series Title: Springer Series in Solid-State Sciences

  • DOI: https://doi.org/10.1007/978-3-662-02351-8

  • Publisher: Springer Berlin, Heidelberg

  • eBook Packages: Springer Book Archive

  • Copyright Information: Springer-Verlag Berlin Heidelberg 1982

  • eBook ISBN: 978-3-662-02351-8Published: 29 June 2013

  • Series ISSN: 0171-1873

  • Series E-ISSN: 2197-4179

  • Edition Number: 2

  • Number of Pages: XII, 462

  • Number of Illustrations: 16 b/w illustrations

  • Additional Information: 1st edition published in the series: Springer Study Edition

  • Topics: Engineering, general

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