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LPCVD Silicon Nitride and Oxynitride Films

Material and Applications in Integrated Circuit Technology

  • Book
  • © 1991

Overview

Editors:
  1. F.H.P.M. Habraken
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Part of the book series: Research Reports Esprit (ESPRIT, volume 1)

Part of the book sub series: Project 369 (2263)

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Keywords

  • Dielectrics
  • Dielektrizität
  • Dünnschichttechnik
  • Integrated Circuits (IC)
  • Integrierte Schaltung
  • Metal-Nitride-Oxide-Silion (MNOS)
  • Metall-Nitrid-Oxid-Silizium-Strukturen (MNOS)
  • Silicon Nitride and Oxynitride Thin Films
  • Siliziumnitrid- und Oxynitrid-Dünnschichten
  • Structures

About this book

The present book collects a broad overview of chemical and physical char­ acteristics of silicon oxynitrides. Special emphasis is put on the way in which these properties influence the electrical characteristics and behaviour of this important material. The results presented here were obtained in an ex­ tended European research cooperation in the framework of ESPRIT Project 369 'Physical-chemical characterization of silicon oxynitrides in relation to their electrical properties', which ran from 1984 to 1988. In this project two industrial laboratories (Philips Research Laborato­ ries in Eindhoven, the Netherlands, and Matra Harris Semiconductors from Nantes, France) cooperated with various academic and government research laboratories (Harwell Laboratory in Great Britain, the Interuniversity Micro­ electronics Center (IMEC) in Leuven, Belgium, and the Faculty of Physics at the University of Utrecht in the Netherlands). The latter partner acted as prime contractor for the project. General interest in silicon oxynitrides for applications in integrated circuit technology stems from the fact that proper choice of deposition conditions enables one to produce materials with properties which can be either oxide­ like or nitride-like. Of, course, in I.C. technology one would like to combine the good properties ofthe two materials, i.e. superior electrical properties of silicon oxide and good diffusion barrier behaviour of silicon nitride, to men­ tion only a few, without paying for such an operation by obtaining all the less desirable properties in such a mixed material.

Bibliographic Information

  • Book Title: LPCVD Silicon Nitride and Oxynitride Films

  • Book Subtitle: Material and Applications in Integrated Circuit Technology

  • Editors: F.H.P.M. Habraken

  • Series Title: Research Reports Esprit

  • Publisher: Springer Berlin, Heidelberg

  • eBook Packages: Springer Book Archive

  • Copyright Information: ECSC — EEC — EAEC, Brussels — Luxembourg 1991

  • Softcover ISBN: 978-3-540-53954-4Published: 28 May 1991

  • Edition Number: 1

  • Number of Pages: X, 159

  • Number of Illustrations: 1 b/w illustrations

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