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Optical Properties 3

  • Book
  • © 2007

Overview

Editors:
  1. E. Kasper

    1. Institut für Halbleitertechnik, Universität Stuttgart, Stuttgart, Germany

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  2. C. Klingshirn

    1. Institut für Angewandte Physik, Universität Karlsruhe (TH), Karlsruhe, Germany

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    You can also search for this editor in PubMed   Google Scholar

  • Standard Reference Book with selected and easily retrievable data from the fields of physics and chemistry collected by acknowledged international scientists
  • Also available online in www.springerLink.com
  • http://www.springerlink.com/book-series/?sw=landolt
  • http://www.landolt-boernstein.com
  • Includes supplementary material: sn.pub/extras

Part of the book series: Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology - New Series (LANDOLT 3, volume 34C3)

Part of the book sub series: Condensed Matter (LANDOLT 3)

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Table of contents (6 chapters)

  1. Front Matter

    Pages i-x
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  2. Basic properties, growth and preparation methods of group IV heterostructures

    • E. Kasper
    Pages 1-18

  3. Influence of strain on bandstructure

    • E. Kasper
    Pages 19-25

  4. Single and coupled quantum wells: SiGe

    • N. Usami, Y. Shiraki
    Pages 26-49

  5. Optical properties of Si/Ge superlattices

    • E. Kasper, G. Theodorou
    Pages 50-88

  6. Si, Ge, and SiGe quantum wires and quantum dots

    • T.P. Pearsall
    Pages 89-120

  7. Luminescence and related properties of nanocrystalline porous silicon

    • N. Koshida
    Pages 121-136
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Keywords

About this book

The first two subvolumes III/34Cl and C2 on the Optical Properties of Semiconductor Quantum Structures have been well received by the scientific community. They concentrated on theoretical concepts (chapter 1), experimental methods (chapter 2), III-V semiconductors (chapter 4), I-VII semiconductors (chapter 6), and IV-VI semiconductors (chapter 7) in subvolume Cl. The II-VII materials (chapter 5) have been treated in subvolume C2. The present subvolume III/34C3 finishes the review on optical properties, by adding the chapter 3 on group IV materials. There are exhaustive data on bulk materials including optical properties, starting from diamond C and going over SiC, Si, Ge, to the semimetal grey Sn, and including their alloys—see e.g. Landolt-Börnstein, New Series, Group III, Vol. 41Al 1 and 2, and A2 1 and 2. Silicon is the backbone of the worldwide semiconductor industry. It is an indirect gap material, which seriously hampers its use in light emitting or even laser diodes. There aresome ideas to overcome this problem by forming group IV quantum structures like Si/Ge superlattices or nanocrystals. This hope triggers to a large extend the applied aspects of the research on the optical properties of group IV quantum structures. Though there are also relevant publications on the optical properties of group IV quantum structures involving C or Sn, the by far largest part of work in this field is devoted to the system Si/Ge. Therefore we concentrate here on this system.

Editors and Affiliations

  • Institut für Halbleitertechnik, Universität Stuttgart, Stuttgart, Germany

    E. Kasper

  • Institut für Angewandte Physik, Universität Karlsruhe (TH), Karlsruhe, Germany

    C. Klingshirn

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