Editors:
- Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers
- Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion
- Enables design of smaller, cheaper and more efficient power supplies
Part of the book series: Integrated Circuits and Systems (ICIR)
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Table of contents (8 chapters)
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Front Matter
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Back Matter
About this book
This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.
- Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;
- Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;
- Enables design of smaller, cheaper and more efficient power supplies.
Editors and Affiliations
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Department of Information Engineering, University of Padova - DEI, Padova, Italy
Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni
About the editors
Gaudenzio Meneghesso is full professor at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices.
Matteo Meneghini is researcher at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices.
Enrico Zanoni is full professor at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices.
Bibliographic Information
Book Title: Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
Editors: Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni
Series Title: Integrated Circuits and Systems
DOI: https://doi.org/10.1007/978-3-319-77994-2
Publisher: Springer Cham
eBook Packages: Engineering, Engineering (R0)
Copyright Information: Springer International Publishing AG, part of Springer Nature 2018
Hardcover ISBN: 978-3-319-77993-5Published: 24 May 2018
Softcover ISBN: 978-3-030-08594-0Published: 30 January 2019
eBook ISBN: 978-3-319-77994-2Published: 12 May 2018
Series ISSN: 1558-9412
Series E-ISSN: 1558-9420
Edition Number: 1
Number of Pages: XIII, 232
Number of Illustrations: 18 b/w illustrations, 165 illustrations in colour
Topics: Circuits and Systems, Electronic Circuits and Devices, Optical and Electronic Materials