Overview
- Explains diffusive processes at room temperature and materials/materials combination in resistive switching
- Illustrates the role of defects in zero, one, and two dimensions
- Features applications of ReRAMs in engineering such as novel computing architectures
Part of the book series: Electronic Materials: Science & Technology (EMST)
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Table of contents (15 chapters)
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Front Matter
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Back Matter
Keywords
About this book
This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling.
A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers’ understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage.
The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.
Editors and Affiliations
About the editors
Prof. Jennifer Rupp is the Thomas Lord Associate Professor of Electrochemical Materials at the
Department of Materials Science and Engineering, and Assistant Professor at the Department of
Electrical Engineering and Computer Science at MIT. Prior she is was non-tenure track assistant
professor at ETH Zurich Switzerland where she held two prestigeous externally funded career
grants, namely an ERC Starting Grant (SNSF) and Swiss National Science Foundation (SNF)
professorship.
Bibliographic Information
Book Title: Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations
Editors: Jennifer Rupp, Daniele Ielmini, Ilia Valov
Series Title: Electronic Materials: Science & Technology
DOI: https://doi.org/10.1007/978-3-030-42424-4
Publisher: Springer Cham
eBook Packages: Chemistry and Materials Science, Chemistry and Material Science (R0)
Copyright Information: Springer Nature Switzerland AG 2022
Hardcover ISBN: 978-3-030-42423-7Published: 16 October 2021
Softcover ISBN: 978-3-030-42426-8Published: 16 October 2022
eBook ISBN: 978-3-030-42424-4Published: 15 October 2021
Series ISSN: 1386-3290
Edition Number: 1
Number of Pages: VI, 383
Number of Illustrations: 186 b/w illustrations
Topics: Optical and Electronic Materials, Ceramics, Glass, Composites, Natural Materials, Energy Materials, Materials Engineering