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Defects in HIgh-k Gate Dielectric Stacks

Nano-Electronic Semiconductor Devices

  • Conference proceedings
  • © 2006

Overview

Editors:
  1. Evgeni Gusev

    1. IBM T.J.Watson Research Center, New York, U.S.A.

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  • To the best of our knowledge, this is the first focused collection of papers on DEFECTS in high-k dielectrics materials
  • State-of-the-art reviews from leading experts in the field of high-k dielectrics
  • Covered from different angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory

Part of the book series: NATO Science Series II: Mathematics, Physics and Chemistry (NAII, volume 220)

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Table of contents (38 papers)

  1. Front Matter

    Pages I-XI
    Download chapter PDF

  2. PVD-HIGH-K GATE DIELECTRICS WITH FUSI GATE AND INFLUENCE OF PDA TREATMENT ON ON-STATE DRIVE CURRENT

    • MASAAKI NIWA, RIICHIROU MITSUHASHI, KAZUHIKO YAMAMOTO, SHIGENORI HAYASHI, AUDE ROTHCHILD, STEFAN KUBICEK et al.
    Pages 1-15

  3. EXTREMELY HIGH-DENSITY CAPACITORS WITH ALD HIGH-K DIELECTRIC LAYERS

    • JOHAN KLOOTWIJK, ANTON KEMMEREN, ROB WOLTERS, FRED ROOZEBOOM, JAN VERHOEVEN, ERIC VAN DEN HEUVEL
    Pages 17-28

  4. TOWARDS UNDERSTANDING OF PROCESSINGNANOSTRUCTURE- PROPERTY INTER-RELATIONSHIPS IN HIGHK/METAL GATE STACKS

    • P. MAJHI, G. BERSUKER, B.H. LEE
    Pages 29-40

  5. ON THE CHARACTERIZATION OF ELECTRONICALLY ACTIVE DEFECTS IN HIGH-к GATE DIELECTRICS

    • D.A. BUCHANAN, D. FELNHOFER
    Pages 41-59

  6. INELASTIC ELECTRON TUNNELLING SPECTROSCOPY (IETS) STUDY OF HIGH-K DIELECTRICS

    • T.P. MA, WEI HE, MIAOMIAO WANG
    Pages 61-72

  7. CHARACTERIZATION AND MODELING OF DEFECTS IN HIGH-K MEASUREMENTS LAYERS THROUGH FAST ELECTRICAL TRANSIENT

    • JEROME MITARD, CHARLES LEROUX, GILLES REIMBOLD, XAVIER GARROS, FRANÇOIS MARTIN, GERARD GHIBAUDO
    Pages 73-84

  8. CHARACTERIZATION OF ELECTRICALLY ACTIVE DEFECTS IN HIGH-K GATE DIELECTRICS USING CHARGE PUMPING

    • ERIC M. VOGEL1, DA-WEI HEH
    Pages 85-96

  9. IMPACT OF HIGH-κ PROPERTIES ON MOSFET ELECTRICAL CHARACTERISTICS

    • LUIGI PANTISANO, L-Å. RAGNARSSON, M. HOUSSA, R. DEGRAEVE, G. GROESENEKEN, T. SCHRAM et al.
    Pages 97-108

  10. STRUCTURAL EVOLUTION AND POINT DEFECTS IN METAL OXIDE-BASED HIGH-κ GATE DIELECTRICS

    • PAUL C. MCINTYRE, HYOUNGSUB KIM, KRISHNA C. SARASWAT
    Pages 109-121

  11. DISORDERED STRUCTURE AND DENSITY OF GAP STATES IN HIGH-PERMITTIVITY THIN SOLID FILMS

    • KAUPO KUKLI, SALVADOR DUEÑAS, HELENA CASTÁN, HECTOR GARCÍA, JUAN BARBOLLA, JAAN AARIK et al.
    Pages 123-134

  12. INTERDIFFUSION STUDIES OF HIGH-K GATE DIELECTRIC STACK CONSTITUENTS

    • P. SIVASUBRAMIANI, M.A. QUEVEDO-LOPEZ, T.H. LEE, M.J. KIM, B.E. GNADE, R.M. WALLACE
    Pages 135-146

  13. XPS/LEIS STUDY OF HIGH-K RARE EARTH (LU, YB) OXIDES AND SILICATES ON SI: THE EFFECT OF ANNEALING ON MICROSTRUCTURE EVOLUTION

    • ANDREI ZENKEVICH, YURI LEBEDINSKII, GIOVANNA SCAREL, MARCO FANCIULLI
    Pages 147-160

  14. TRANSIENT CHARGING EFFECTS AND ITS IMPLICATIONS TO THE RELIABILITY OF HIGH-K DIELECTRICS

    • BYOUNG HUN LEE, RINO CHOI, RUSTY HARRIS, S.A. KRISHAN, CHADWIN D. YOUNG, JOHNNY SIM et al.
    Pages 161-173

  15. DEFECT ENERGY LEVELS IN HIGH-K GATE OXIDES

    • J. ROBERTSON, K. XIONG, S.J. CLARK, S.J. CLARK
    Pages 175-187

  16. DEFECT-RELATED ISSUES IN HIGH-K DIELECTRICS

    • SOKRATES T. PANTELIDES, M.H. EVANS, D.M. FLEETWOOD, E. P. GUSEV, J. D. JOANNOPOULOS, Z. LU et al.
    Pages 189-202

  17. STUDYING THE EFFECTS OF NITROGEN AND HAFNIUM INCORPORATION INTO THE SIO2/SI(100) INTERFACE WITH REPLICA-EXCHANGE MOLECULAR DYNAMICS AND DENSITYFUNCTIONAL- THEORY CALCULATIONS

    • WANDA ANDREONI, ALESSANDRO CURIONI, DOMINIK FISCHER, SALOMON R. BILLETER, CARLO A. PIGNEDOLI
    Pages 203-214

  18. PROBING POINT DEFECTS AND TRAPS IN STACKS OF ULTRATHIN HAFNIUM OXIDES ON (100)SI BY ELECTRON SPIN RESONANCE: INTERFACES AND N INCORPORATION

    • A. STESMANS, V.V. AFANAS’EV
    Pages 215-226

  19. MECHANISM OF CHARGE TRAPPING REDUCTION IN SCALED HIGH-κ GATE STACKS

    • G. BERSUKER, B. H. LEE, H.R. HUFF, J. GAVARTIN, A. SHLUGER
    Pages 227-236

  20. ELECTRICALLY ACTIVE INTERFACE AND BULK SEMICONDUCTOR DEFECTS IN HIGH-K / GERMANIUM STRUCTURES

    • A. DIMOULAS
    Pages 237-248
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Keywords

About this book

The goal of this NATO Advanced Research Workshop (ARW) entitled “Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices”, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.

Editors and Affiliations

  • IBM T.J.Watson Research Center, New York, U.S.A.

    Evgeni Gusev

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