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Advanced High Voltage Power Device Concepts

  • Book
  • © 2012

Overview

Authors:
  1. B. Jayant Baliga

    1. , Dept. Electrical & Computer Engineering, North Carolina State University, Raleigh, USA

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  • Provides the first comprehensive treatment of high voltage (over 5000-volts) power devices suitable for the power distribution, traction, and motor-control markets
  • Includes analytical formulations for all the device structures with validation performed using numerical simulations
  • Analyzes potential silicon carbide structures that could compete with the silicon devices and includes a comparison of the devices
  • Includes supplementary material: sn.pub/extras

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Table of contents (11 chapters)

  1. Front Matter

    Pages i-xvi
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  2. Introduction

    • B. Jayant Baliga
    Pages 1-19

  3. Silicon Thyristors

    • B. Jayant Baliga
    Pages 21-56

  4. Silicon Carbide Thyristors

    • B. Jayant Baliga
    Pages 57-77

  5. Silicon GTO

    • B. Jayant Baliga
    Pages 79-150

  6. Silicon IGBT (Insulated Gate Bipolar Transistor)

    • B. Jayant Baliga
    Pages 151-234

  7. SiC Planar MOSFET Structures

    • B. Jayant Baliga
    Pages 235-292

  8. Silicon Carbide IGBT

    • B. Jayant Baliga
    Pages 293-383

  9. Silicon MCT

    • B. Jayant Baliga
    Pages 385-436

  10. Silicon BRT

    • B. Jayant Baliga
    Pages 437-483

  11. Silicon EST

    • B. Jayant Baliga
    Pages 485-551

  12. Synopsis

    • B. Jayant Baliga
    Pages 553-560

  13. Back Matter

    Pages 561-568
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Keywords

About this book

The devices described in “Advanced MOS-Gated Thyristor Concepts” are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor control in electric trains, steel-mills, etc. Advanced concepts that enable improving the performance of power thyristors are discussed here, along with devices with blocking voltage capabilities of 5,000-V, 10,000-V and 15,000-V. Throughout the book, analytical models are generated to allow a simple analysis of the structures and to obtain insight into the underlying physics. The results of two-dimensional simulations are provided to corroborate the analytical models and give greater insight into the device operation.

Authors and Affiliations

  • , Dept. Electrical & Computer Engineering, North Carolina State University, Raleigh, USA

    B. Jayant Baliga

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