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Provides extensive analytical formulations for design and analysis of structures such as the Junction Barrier controlled Schottky (JBS) Rectifier
Includes numerical simulation examples to explain the operating physics and validate the models
Extensive coverage of the role of silicon carbide in the design and structure of power rectifiers
Advanced Power Rectifier Concepts provides an in-depth treatment of the physics of operation of advanced power rectifiers. Analytical models for explaining the operation of all the advanced power rectifier devices are developed. Results of numerical simulations are provided for additional insight into device physics and for validation of various analytical models.
Drawing upon years of practical experience and using numerous examples and illustrative designs, B. Jayant Baliga discusses:
Analytical formulations for design and analysis of structures such as the Junction Barrier controlled Schottky (JBS) Rectifier and the Merged PiN Schottky (MPS) Rectifier
Numerical simulations to explain the operating physics and validate the models
The role of silicon carbide in the structural design and development of power rectifiers
Advanced Power Rectifier Concepts will be of interest to practicing engineers in the power semiconductor community and can also serve as a reference for graduate students and faculty doing research in an academic environment. Selected sections of the book can be used as supplementary teaching material for courses taught using the textbook 'Fundamentals of Power Semiconductor Devices' by the author.
Content Level »Research
Keywords »analytical models - control - device operation - device physics - numerical simulations - physics - power device - power rectifiers - simulation - transistor - transistors