Modelling of Interface Carrier Transport for Device Simulation

1. Front Matter

   Pages I-XI

   PDF

2. Introduction

   • Dietmar Schroeder

   Pages 1-2

3. Charge Transport in the Volume

   • Dietmar Schroeder

   Pages 3-19

4. General Electronic Model of the Interface

   • Dietmar Schroeder

   Pages 20-36

5. Charge Transport Across the Interface

   • Dietmar Schroeder

   Pages 37-78

6. Semiconductor-Insulator Interface

   • Dietmar Schroeder

   Pages 79-92

7. Metal-Semiconductor Contact

   • Dietmar Schroeder

   Pages 93-153

8. Semiconductor Heterojunction

   • Dietmar Schroeder

   Pages 154-171

9. MOSFET Gate

   • Dietmar Schroeder

   Pages 172-184

10. Discretization

    • Dietmar Schroeder

    Pages 185-199

11. Back Matter

    Pages 200-225

    PDF

This book represents a comprehensive text devoted to charge transport at semiconductor interfaces and its consideration in device simulation by interface and boundary conditions. It contains a broad review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. Particular emphasis is put on the consistent deriva­ tion of interface or boundary conditions for semiconductor device simula­ tion. The book is of interest with respect to a wide range of electronic engineering activities, as process design, device design, process character­ ization, research in microelectronics, or device simulator development. It is also useful for students and lecturers in courses of electronic engineering, and it supplements the library of technically oriented solid-state physicists. The deepest roots of this book date back to the mid-seventies. Being a student of electrical engineering, who was exposed for the first time to the material of semiconductor device electronics, I was puzzled by noticing that much emphasis was put on a thorough introduction and understand­ ing of the basic semiconductor equations, while the boundary conditions for these equations received very much less attention. Until today on many occasions one could get the impression that boundary conditions are unimportant accessories; they do not stand on their own besides the bulk transport equations, although it is clear that they are of course a necessary complement of these.

• Helium-Atom-Streuung
• metal
• semiconductor
• semiconductor devices
• simulation
• surface
• transport

• Technische Elektronik, Technische Universität Hamburg-Harburg, Hamburg, Federal Republic of Germany

  Dietmar Schroeder

Policies and ethics