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Hierarchical Device Simulation

The Monte-Carlo Perspective

  • Book
  • © 2003

Overview

  • First monograph on physics-based simulations of novel strained Si and SiGe devices
  • In-depth description of the full-band monte-carlo method for SiGe
  • Comprehensive description of the momentum-based and monte-carlo models is given

Part of the book series: Computational Microelectronics (COMPUTATIONAL)

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Table of contents (9 chapters)

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About this book

This book summarizes the research of more than a decade. Its early motivation dates back to the eighties and to the memorable talks Dr. C. Moglestue (FHG Freiburg) gave on his Monte-Carlo solutions of the Boltzmann transport equation at the NASECODE conferences in Ireland. At that time numerical semiconductor device modeling basically implied the application of the drift-diffusion model. On the one hand, those talks clearly showed the potential of the Monte-Carlo model for an accurate description of many important transport issues that cannot adequately be addressed by the drift-diffusion approximation. On the other hand, they also clearly demonstrated that at that time only very few experts were able to extract useful results from a Monte-Carlo simulator. With this background, Monte-Carlo research activities were started in 1986 at the University of Aachen (RWTH Aachen), Germany. Different to many other Monte-Carlo research groups, the Monte-Carlo research in Aachen took place in an environment of active drift-diffusion and hydrodynamic model development.

Authors and Affiliations

  • Institut für Theoretische Elektrotechnik und Mikroelektronik, Universität Bremen, Bremen, Germany

    Christoph Jungemann, Bernd Meinerzhagen

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