Computational Electronics

1. Front Matter

   Pages i-xiii

   PDF

2. Drift-Diffusion Simulation

   1. Front Matter

      Pages 1-1

      PDF

   2. Device Simulation for Silicon ULSI

      • M. R. Pinto, W. M. Coughran Jr., C. S. Rafferty, R. K. Smith, E. Sangiorgi

      Pages 3-13

   3. Drift-Diffusion Systems: Variational Principles and Fixed Point Maps for Steady State Semiconductor Models

      • Joseph W. Jerome

      Pages 15-20

   4. Drift-Diffusion Systems: Analysis of Discretized Models

      • Thomas Kerkhoven

      Pages 21-26

   5. Simulation of a Steady-State Electron Shock Wave in a Submicron Semiconductor Device Using High-Order Upwind Methods

      • Emad Fatemi, Carl L. Gardner, Joseph W. Jerome, Stanley Osher, Donald J. Rose

      Pages 27-32

   6. Adaptive Mesh Refinement for 2-D Numerical Analysis of Semiconductor Devices

      • Ilhun Son, Ting-wei Tang, Alexander Eydeland

      Pages 33-36

   7. Adaptive Grids for Semiconductor Modelling

      • G. F. Carey, J. Schmidt, M. Sharma

      Pages 37-41

   8. A Numerical Large Signal Model for the Heterojunction Bipolar Transistor

      • Douglas A. Teeter, Jack R. East, Richard K. Mains, George I. Haddad

      Pages 43-46

   9. The Program OSMOSIS: A Rigorous Numerical Implementation of Augmented Drift-Diffusion Equation for the Simulation of Velocity Overshoot

      • Edwin C. Kan, Umberto Ravaioli, Thomas Kerkhoven

      Pages 47-50

   10. A New Technique for Including Overshoot Phenomena in Conventional Drift-Diffusion Simulators

       • P. A. Blakey, X. L. Wang, C. M. Maziar, P. A. Sandborn

       Pages 51-54

   11. A Self-Consistent Calculation of Spatial Spreading of the Quantum Well in HEMT

       • Sze-Him Ng, Rahim Khoie, R. Venkat

       Pages 55-58

   12. A New Nonparabolic Hydrodynamic Model with Quantum Corrections

       • D. L. Woolard, M. A. Stroscio, M. A. Littlejohn, R. J. Trew, H. L. Grubin

       Pages 59-62

   13. The Conditions of Device Simulation using Full Hydrodynamic Equations

       • J. Zhou, A. M. Kriman, D. K. Ferry

       Pages 63-66

3. Monte Carlo Simulation — Boltzmann Equation

   1. Front Matter

      Pages 67-67

      PDF

   2. Device Simulation Augmented by the Monte Carlo Method

      • M. A. Littlejohn, J. L. Pelouard, W. C. Koscielniak, D. L. Woolard

      Pages 69-74

   3. Ensemble Monte Carlo Simulation of Femtosecond Laser Excitation in Semiconductors

      • D. K. Ferry, A. M. Kriman, M. J. Kann, H. Hida, S. Yamaguchi

      Pages 75-80

   4. Dynamics of Photoexcited Carriers in GaAs

      • C. J. Stanton, D. W. Bailey

      Pages 81-86

   5. The DAMOCLES Monte Carlo Device Simulation Program

      • Steven E. Laux, Massimo V. Fischetti

      Pages 87-92

   6. Iterative Spectral Solution of Boltzmann’s Equation for Semiconductor Devices

      • B. H. Floyd, Y. L. Le Coz

      Pages 93-95

Large computational resources are of ever increasing importance for the simulation of semiconductor processes, devices and integrated circuits. The Workshop on Computational Electronics was intended to be a forum for the dis­ cussion of the state-of-the-art of device simulation. Three major research areas were covered: conventional simulations, based on the drift-diffusion and the hydrodynamic models; Monte Carlo methods and other techniques for the solution of the Boltzmann transport equation; and computational approaches to quantum transport which are relevant to novel devices based on quantum interference and resonant tunneling phenomena. Our goal was to bring together researchers from various disciplines that contribute to the advancement of device simulation. These include Computer Sci­ ence, Electrical Engineering, Applied Physics and Applied Mathematics. The suc­ cess of this multidisciplinary formula was proven by numerous interactions which took place at the Workshop and during the following three-day Short Course on Computational Electronics. The format of the course, including a number of tutorial lectures, and the large attendance of graduate students, stimulated many discussions and has proven to us once more the importance of cross-fertilization between the different disciplines.

• Computer
• Laser
• Signal
• Simulation
• Transistor
• electronics
• field-effect transistor
• heterojunction bipolar transistor
• metal semiconductor field-effect transistor
• model
• modeling
• numerical analysis
• numerical methods

• Beckman Institute, University of Illinois, USA

  K. Hess, J. P. Leburton, U. Ravaioli

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