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Engineering - Electronics & Electrical Engineering | Fundamentals of Power Semiconductor Devices (Press)

Fundamentals of Power Semiconductor Devices

Baliga, B. Jayant

2008, XXIV, 1072p. 450 illus..

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Heidelberg, 21 December 2010

B. Jayant Baliga inducted into Electronic Design Engineering Hall of Fame

Springer author singled out for inventing the Insulated Gate Bipolar Transistor

Author_Prof.B.JayantBaliga_bw
Springer author B. Jayant Baliga has been inducted into the 2010 Electronic Design Engineering Hall of Fame, sponsored by the magazine Electronic Design. Dr. Baliga was honored for inventing the Insulated Gate Bipolar Transistor (IGBT), an energy-saving semiconductor switch that controls the flow of power from an energy source to the application that needs energy.
Dr. Baliga has published four books with Springer: Advanced Power MOSFET Concepts, Advanced Power Rectifier Concepts, and Fundamentals of Power Semiconductor Devices. He co-authored Cryogenic Operation of Silicon Power Devices with Ranbir Singh.
The IGBT is used in everything from light bulbs to washing machines to automobiles. The energy saved by the use of these devices for running electric motors and in energy-efficient compact fluorescent light bulbs alone equals 100 gigawatts. Due to its use in compact heart defibrillators, the IGBT is also estimated to save 100,000 lives annually.
Baglia is Distinguished University Professor of Electrical and Computer Engineering and director of the Power Semiconductor Research Center (PSRC) at North Carolina State University. He has started four companies, holds more than 100 US patents, and is the author of 14 books and more than 500 articles.
The Electronic Design Engineering Hall of Fame was created in 2002 to honor individuals for their landmark career achievements and contributions to electronic engineering. Previous winners of the award include Thomas Edison, Steve Jobs, and Bill Gates.

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