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Engineering - Electronics & Electrical Engineering | Fundamentals of Power Semiconductor Devices

Fundamentals of Power Semiconductor Devices

Baliga, B. Jayant

2008, XXIV, 1072p. 450 illus..

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  • Provides extensive analytical formulations for design and analysis of structures
  • Includes numerical simulation examples to elucidate the operating physics and validate the models
  • Analyzes device performance attributes to allow practicing engineers in the industry to develop products
  • Presents a cohesive treatment of all types of power rectifiers and transistors to create a comprehensive reference in the field

Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are developed. The treatment focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices.

Drawing upon years of practical experience and using numerous examples and illustrative applications, B. Jayant Baliga discusses:

  • Numerical simulation examples to elucidate the operating physics and validate the models
  • Device performance attributes that allow practicing engineers in the industry to develop products
  • Treatment of all types of power rectifiers and transistors to create a comprehensive reference in the field
  • Fundamentals of Power Semiconductor Devices will be of interest to practicing engineers in the power semiconductor device community and can also serve as an ideal textbook for teaching courses on power semiconductor devices due to the extensive analytical treatment provided for all device structures.

Content Level » Professional/practitioner

Keywords » Leistungsfeldeffekttransistor - Schottky rectifiers - Thyristor - Transistor - bipolar junction transistor - field-effect transistor - metal oxide semiconductur field-effect transistor - power electronics - semiconductor devices - silicon devices - transport physics

Related subjects » Circuits & Systems - Electronics & Electrical Engineering - Energy - Energy Technology - Materials - Optics & Lasers

Table of contents 

Introduction.- Material properties and transport physics.- Breakdown voltage.- Schottky rectifiers.- P-i-N rectifiers.- Power MOSFETs.- Bipolar junction transistors.- Thyristors.- Insulated gate bipolar transistors.- Synopsis.

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Distribution rights for India: CBS Publishers, New Delhi, India

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