Authors:
- Presents most recent developments on theory, modeling and simulation of nanoscale transistors
- Provides tools necessary to push traditional electronic debvices to their limits and to develop new devices that will follow the MOSFET
- Includes supplementary material: sn.pub/extras
Buy it now
Buying options
Tax calculation will be finalised at checkout
Other ways to access
This is a preview of subscription content, log in via an institution to check for access.
Table of contents (6 chapters)
-
Front Matter
-
Back Matter
About this book
Authors and Affiliations
-
Purdue University, West Lafayette, USA
Mark S. Lundstrom
-
University of Florida, Gainesville, USA
Jing Guo
About the authors
Mark S. Lundstrom is the Scifres Distinguished Professor of Electrical and Computer Engineering at Purdue University where he also directs the NSF Network for Computational Nanotechnology. His current research interests center on the physics of semiconductor devices, especially nanoscale transistors. His previous work includes studies of heterostructure devices, solar cells, heterojunction bipolar transistors and semiconductor lasers. During the course of his Purdue career, Lundstrom has served as director of the Optoelectronics Research Center and assistant dean of the Schools of Engineering. He is a fellow of both the Institute of Electrical and Electronic Engineers (IEEE) and the American Physical Society and the recipient of several awards for teaching and research — most recently the 2002 IEEE Cledo Brunetti Award and the 2002 Semiconductor Research Corporation Technical Achievement Award for his work with his colleague, S. Datta, on nanoscale electronics.
Jing Guo is an assistant professor of Electrical and Computer Engineering at University of Florida, Gainesville. His has worked on the theory, modeling and simulation of a variety of nanotransistors, including silicon nanotransistors, carbon nanotube transistors, and single electron transistors, in close collaboration with experimentalists. His current research interests focus on modeling and simulation of nanoscale devices, carbon nanotube electronics and optoelectronics, quantum transport, physics of nanoscale transistors, and parallel computation.
Bibliographic Information
Book Title: Nanoscale Transistors
Book Subtitle: Device Physics, Modeling and Simulation
Authors: Mark S. Lundstrom, Jing Guo
DOI: https://doi.org/10.1007/0-387-28003-0
Publisher: Springer New York, NY
eBook Packages: Engineering, Engineering (R0)
Copyright Information: Springer-Verlag US 2006
Hardcover ISBN: 978-0-387-28002-8Published: 09 December 2005
Softcover ISBN: 978-1-4419-3915-9Published: 29 October 2010
eBook ISBN: 978-0-387-28003-5Published: 18 June 2006
Edition Number: 1
Number of Pages: VIII, 218
Number of Illustrations: 106 b/w illustrations
Topics: Electronics and Microelectronics, Instrumentation, Nanotechnology, Solid State Physics, Spectroscopy and Microscopy, Optical and Electronic Materials, Condensed Matter Physics