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Engineering - Circuits & Systems | MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch

MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch

Srivastava, Viranjay M., Singh, Ghanshyam

2014, XV, 199 p. 55 illus., 45 illus. in color.

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  • Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET
  • Explains the design of RF switches using the technologies presented and simulates switches
  • Verifies parameters and discusses feasibility of devices and switches

This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET.  The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET  is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.

 ·         Provides a single-source reference to the latest technologies for the design of

Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET;

·         Explains the design of RF switches using the technologies presented and simulates switches;

·         Verifies parameters and discusses feasibility of devices and switches.

Content Level » Professional/practitioner

Keywords » Analog/RF IC Design - CMOS Radio-Frequency Integrated Circuits - CSDG MOSFET - DP4T RF Switch - Double-Gate MOSFET - Double-Pole Four-Throw RF Switch - HFO2 Based Double-Gate MOSFET

Related subjects » Circuits & Systems - Condensed Matter Physics - Signals & Communication

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