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MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch

  • Book
  • © 2014

Overview

Authors:
  1. Viranjay M. Srivastava

    1. Department of Electronics and Communication Engineering, Jaypee University of Information Technology, Solan, India

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  2. Ghanshyam Singh

    1. Dept. of Electronics & Comm. Engineering, Jaypee Univ. of Information Technology, Solan, India

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  • Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET
  • Explains the design of RF switches using the technologies presented and simulates switches
  • Verifies parameters and discusses feasibility of devices and switches
  • Includes supplementary material: sn.pub/extras

Part of the book series: Analog Circuits and Signal Processing (ACSP, volume 122)

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Table of contents (8 chapters)

  1. Front Matter

    Pages i-xv
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  2. Introduction

    • Viranjay M. Srivastava, Ghanshyam Singh
    Pages 1-22

  3. Design of Double-Pole Four-Throw RF Switch

    • Viranjay M. Srivastava, Ghanshyam Singh
    Pages 23-43

  4. Design of Double-Gate MOSFET

    • Viranjay M. Srivastava, Ghanshyam Singh
    Pages 45-83

  5. Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET

    • Viranjay M. Srivastava, Ghanshyam Singh
    Pages 85-109

  6. Cylindrical Surrounding Double-Gate RF MOSFET

    • Viranjay M. Srivastava, Ghanshyam Singh
    Pages 111-142

  7. Hafnium Dioxide-Based Double-Pole Four-Throw Double-Gate RF CMOS Switch

    • Viranjay M. Srivastava, Ghanshyam Singh
    Pages 143-163

  8. Testing of MOSFETs Surfaces Using Image Acquisition

    • Viranjay M. Srivastava, Ghanshyam Singh
    Pages 165-175

  9. Conclusions and Future Scope

    • Viranjay M. Srivastava, Ghanshyam Singh
    Pages 177-182

  10. Back Matter

    Pages 183-199
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Keywords

About this book

This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.

Authors and Affiliations

  • Department of Electronics and Communication Engineering, Jaypee University of Information Technology, Solan, India

    Viranjay M. Srivastava

  • Dept. of Electronics & Comm. Engineering, Jaypee Univ. of Information Technology, Solan, India

    Ghanshyam Singh

About the authors

Dr. Viranjay M. Srivastava is an Assistant Professor at Jaypee University of Information Technology. Dr. Ghanshyam Singh is an Associate Professor at Jaypee University of Information Technology.

Bibliographic Information

  • Book Title: MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch

  • Authors: Viranjay M. Srivastava, Ghanshyam Singh

  • Series Title: Analog Circuits and Signal Processing

  • DOI: https://doi.org/10.1007/978-3-319-01165-3

  • Publisher: Springer Cham

  • eBook Packages: Engineering, Engineering (R0)

  • Copyright Information: Springer International Publishing Switzerland 2014

  • Hardcover ISBN: 978-3-319-01164-6Published: 18 October 2013

  • Softcover ISBN: 978-3-319-34535-2Published: 23 August 2016

  • eBook ISBN: 978-3-319-01165-3Published: 07 October 2013

  • Series ISSN: 1872-082X

  • Series E-ISSN: 2197-1854

  • Edition Number: 1

  • Number of Pages: XV, 199

  • Number of Illustrations: 10 b/w illustrations, 45 illustrations in colour

  • Topics: Circuits and Systems, Communications Engineering, Networks, Semiconductors

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