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Engineering | Novel Three-state Quantum Dot Gate Field Effect Transistor - Fabrication, Modeling and Applications

Novel Three-state Quantum Dot Gate Field Effect Transistor

Fabrication, Modeling and Applications

Karmakar, Supriya

2014, XIV, 134 p. 121 illus., 49 illus. in color.

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  • Introduces a novel semiconductor device for multi valued logic implementation which can make reader to continue new research in this direction in future
  • Provides details of step-by-step foundation of quantum dot gate field effect transistor
  • Discusses three state logic design fundamentals
  • Entails the simple comparator design and its application in designing ADC and DAC

The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated.

Content Level » Research

Keywords » Flash ADC Architecture - Integrated Circuit - Multi-valued Logic - Quantum Dot Gate Field Effect Transistor - Tristate Inverter

Related subjects » Applied & Technical Physics - Circuits & Systems - Engineering

Table of contents 

Introduction: Multi State Devices and Logic.- Quantum Dot Gate Field Effect Transistor Device Structures.- Quantum Dot Gate Field Effect Transistors Fabrication and Characterization.- Quantum DOT Gate Field Effect Transistors Theory and Device Modeling.- Quantum Dot Gate NMOS Inverter.- Quantum Dot Gate Field Effect Transistor (QDGFET): Circuit Model and Ternary Logic Inverter.- Analog-to-Digital Converter (ADC) and Digital-to-Analog Converter (DAC) Using Quantum DOT Gate Field Effect Transistor (QDGFET).- Performance in SUB-25nm Range.- Conclusions.

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