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Engineering | Feature Profile Evolution in Plasma Processing Using On-wafer Monitoring System

Feature Profile Evolution in Plasma Processing Using On-wafer Monitoring System

Samukawa, Seiji

2014, VIII, 40 p. 35 illus., 30 illus. in color. With online files/update.

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  • Is the first book that focuses on an etching profile prediction system from a practical application viewpoint
  • Explains the development of an effective on-wafer UV sensor, on-wafer charge-up sensor, and on-wafer sheath shape sensor
  • Contributes to a better understanding of etching profile prediction systems, including several experimental findings

This book provides for the first time a good understanding of the etching profile technologies that do not disturb the plasma. Three types of sensors are introduced: on-wafer UV sensors, on-wafer charge-up sensors and on-wafer sheath-shape sensors in the plasma processing and prediction system of real etching profiles based on monitoring data. Readers are made familiar with these sensors, which can measure real plasma process surface conditions such as defect generations due to UV-irradiation, ion flight direction due to charge-up voltage in high-aspect ratio structures and ion sheath conditions at the plasma/surface interface. The plasma etching profile realistically predicted by a computer simulation based on output data from these sensors is described.

Content Level » Research

Keywords » Etching Profile - On-wafer Monitoring Technique - On-wafer UV Sensor - Ultralarge-scale integrated circuit (ULSI)

Related subjects » Atomic, Molecular, Optical & Plasma Physics - Condensed Matter Physics - Engineering - Nanotechnology

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