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First book to connect missing link between semiconductor device engineers/designers and process engineers, material designers, and chemists
First book solely dedicated to the application of ALD to the semiconductor/microelectronics fields
Written by top experts in the field
Atomic Layer Deposition (ALD) was originally designed for depositing uniform passivation layers over a very large area for display devices in the late 1970s. Only recently, in the 21st century, has the this technique become popular for high integrated semiconductor memory devices. This book discusses ALD for all modern semiconductor devices, the basic chemistry of ALD, and models of ALD processes. The book also details ALD for both mass produced memories and emerging memories. Each chapter of the book provides history, operating principles, and a full explanation of ALD processes for each device.
Content Level »Research
Keywords »ALD for mass-production memories - ALD modeling - ALD simulations - Atomic Layer Deposition - Modern Semiconductor Devices
Chapter 1. Introduction; Cheol Seong Hwang and Cha Young Yoo (Seoul National University and Samsung)
Chapter 2 . ALD Precursors and Reaction mechanism ; Roy Gordon (Harvard)
Chapter 3 . ALD simulations; Simon Elliott (Tyndall)
III.ALD for memory devices
Chapter 4 . ALD for mass-production memories (DRAM and Flash); Cheol Seong Hwang,
Seong Keun Kim, and Sang Woon Lee (SNU)
III-2. ALD for emerging memories
Chapter 5 . PcRAM; Mikko Ritala and Simone Raoux (Helsinki and T. J. Watson IBM)
Chapter 6 .FeRAM; Susanne Hoffmann and Takayuki Watanabe (Juelich and Canon)
IV.ALD for logic devices
Chapter 7.Front end of the line process; Jeong Hwan Han, Moonju Cho, Annelies Delabie, Tae Joo Park, and Cheol Seong Hwang
Chapter 8. Back end of the line; Hyung Joon Kim, Han-Bo-Ram Lee, and Soohyun Kim (Yonsei and
Chapter 9. Equipment for Atomic Layer Deposition for Semiconductor Manufacturing; Schubert Chu