The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2

1. Front Matter

   Pages i-xvi

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2. Thermal Oxidation Mechanisms and Modeling

   1. Front Matter

      Pages 1-2

      PDF

   2. Silicon Oxides and Oxidation

      • A. Marshall Stoneham

      Pages 3-6

   3. Use of 18O Labelling to Study Growth Mechanisms in Dry Oxidation of Silicon

      • Isabelle Trimaille, Stan I. Raider, Jean-Jacques Ganem, Serge Rigo, Nicholas A. Penebre

      Pages 7-13

   4. Strain Dependent Diffusion During Dry Thermal Oxidation of Crystalline Si

      • C. H. Bjorkman, G. Lucovsky

      Pages 15-21

   5. Oxidation of Silicon in Oxygen: Measurement of Film Thickness and Kinetics

      • S. C. Kao, R. H. Doremus

      Pages 23-30

   6. Modeling Process-Dependent Thermal Silicon Dioxide (SiO2) Films on Silicon

      • H. F. Wei, A. K. Henning, J. Slinkman, J. L. Rogers

      Pages 31-41

3. Novel Oxidation Methods and Characterization

   1. Front Matter

      Pages 43-44

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   2. New Approach to Chemically Enhanced Oxidation — A Review

      • Ralph J. Jaccodine

      Pages 45-54

   3. Kinetics of Oxidation of Silicon by Electron Cyclotron Resonance Plasmas

      • J. Joseph, Y. Z. Hu, E. A. Irene

      Pages 55-62

   4. Mechanisms of Oxidation Rate Enhancement in Negative-Point Oxygen Corona Discharge Processing of SiO2 Films on Si

      • L. M. Landsberger

      Pages 63-70

   5. High Pressure Oxidation for Low Temperature Passivation of Si1-xGex Alloys

      • C. Caragianis, Y. Shigesato, D. C. Paine

      Pages 71-79

   6. A New Ellipsometry Technique for Interface Analysis: Application to Si-SiO2

      • E. A. Irene, V. A. Yakovlev

      Pages 81-90

   7. Observation of Thin SiO2 Films Using IR-RAS

      • Shuzo Fujimura, Kenji Ishikawa, Haruhisa Mori

      Pages 91-98

   8. Deconvolution of Thickness-Averaged Structural and Optical Properties of Thermally Grown and Rpecvd SiO2 Films

      • C. E. Shearon Jr., C. H. Bjorkman, G. Lucovsky

      Pages 99-108

   9. Tem Investigations of the Oxidation Kinetics of Amorphous Silicon Films

      • Manfred Reiche

      Pages 109-116

4. Deposition and Properties of SiO2

   1. Front Matter

      Pages 117-118

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   2. Thermal and X-Ray Production of Point Defects in Vitreous SiO2

      • Frank L. Galeener

      Pages 119-129

   3. A Review of the EPR Spectroscopy of the Point Defects in α-Quartz: The Decade 1982–1992

      • John A. Weil

      Pages 131-144

   4. Formation of Si/SiO2 Heterostructures by Low-Temperature, Plasma-Assisted Oxidation and Deposition Processes

      • G. Lucovsky, Yi Ma, T. Yasuda, S. Habermehl

      Pages 145-156

The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.

• defects
• dielectrics
• electronics
• modeling
• semiconductor
• semiconductor devices

• Stanford University, Stanford, USA

  C. Robert Helms, Bruce E. Deal

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