Analysis and Simulation of Semiconductor Devices

1. Front Matter

   Pages I-XIV

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2. Introduction

   • Siegfried Selberherr

   Pages 1-7

3. Some Fundamental Properties

   • Siegfried Selberherr

   Pages 8-45

4. Process Modeling

   • Siegfried Selberherr

   Pages 46-79

5. The Physical Parameters

   • Siegfried Selberherr

   Pages 80-126

6. Analytical Investigations About the Basic Semiconductor Equations

   • Siegfried Selberherr

   Pages 127-148

7. The Discretization of the Basic Semiconductor Equations

   • Siegfried Selberherr

   Pages 149-201

8. The Solution of Systems of Nonlinear Algebraic Equations

   • Siegfried Selberherr

   Pages 202-213

9. The Solution of Sparse Systems of Linear Equations

   • Siegfried Selberherr

   Pages 214-257

10. A Glimpse on Results

    • Siegfried Selberherr

    Pages 258-285

11. Back Matter

    Pages 286-294

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The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.

• Analysis
• Halbleiterbauelement
• Numerische Mathematik
• Partielle Differentialgleichung
• semiconductor
• simulation

• Institut für Allgemeine Elektrotechnik und Elektronik, Technische Universität Wien, Austria

  Siegfried Selberherr

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