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Electric-Field Control of Magnetization and Electronic Transport in Ferromagnetic/Ferroelectric Heterostructures

  • Book
  • © 2014

Overview

Authors:
  1. Sen Zhang

    1. College of Science, National University of Defense Technology, Changsha, People's Republic of China

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  • Nominated as an outstanding thesis by Tsinghua University
  • Introduces multiferroic materials and methods in order to briefly characterize multiferroic properties
  • Describes the achievement of switchable and nonvolatile electric-field control of magnetization in Co40Fe40B20/Pb(Mg1/3Nb2/3)0.7 Ti0.3O3(001) structures at room temperature
  • Puts forward a new mechanism for the electric field control of nonvolatile magnetization in strain-mediated multiferroic heterostructures
  • Includes supplementary material: sn.pub/extras

Part of the book series: Springer Theses (Springer Theses)

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Table of contents (5 chapters)

  1. Front Matter

    Pages i-xvi
    Download chapter PDF

  2. Introduction

    • Sen Zhang
    Pages 1-48

  3. Experimental Methods

    • Sen Zhang
    Pages 49-74

  4. Electric-Field Control of Magnetism in CoFeB/PMN-PT(001) Structure

    • Sen Zhang
    Pages 75-107

  5. Electric-Field Control of Magnetism and Magnetoresistance in CoFeB/PMN-PT(011) Structure

    • Sen Zhang
    Pages 109-128

  6. Summary and Outlook

    • Sen Zhang
    Pages 129-130
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Keywords

About this book

This book mainly focuses on the investigation of the electric-field control of magnetism and spin-dependent transportation based on a Co40Fe40B20(CoFeB)/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(PMN-PT) multiferroic heterostructure. Methods of characterization and analysis of the multiferroic properties with in situ electric fields are induced to detect the direct magnetoelectric (ME) coupling. A switchable and non-volatile electric field control of magnetization in CoFeB/PMN-PT(001) structures is observed at room temperature, and the mechanism of direct coupling between the ferroelectric domain and ferromagnetic film due to the combined action of 109° ferroelastic domain switching in PMN-PT and the absence of magnetocrystalline anisotropy in CoFeB is demonstrated. Moreover, the electric-field control of giant magnetoresistance is achieved in a CoFeB-based spin valve deposited on top of (011) oriented PMN-PT, which offers an avenue for implementing electric-writing and magnetic-reading random access memory at room temperature. Readers will learn the basic properties of multiferroic materials, many useful techniques related to characterizing multiferroics and the interesting ME effect in CoFeB/PMN-PT structures, which is significant for applications.

Authors and Affiliations

  • College of Science, National University of Defense Technology, Changsha, People's Republic of China

    Sen Zhang

About the author

Sen Zhang received his B.Sc. in physics from School of Physical Science and Technology, Lanzhou University, China in 2007. He obtained his Ph.D. in physics from Physics Department of Tsinghua University in June 2012. His major research project in Prof. Yonggang Zhao's group is preparing compounded multiferroic structures as well as spintronic devices and studying on electric field control of magnetization as well as electronic transport in ferromagnetic/ferroelectric heterostructures. He is now a lecturer at College of Science, National University of Defense Technology, focusing on the coupling effect of electric, magnetic and photonic properties in nanomaterial and nanostructures.

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