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New Developments in Semiconductor Physics

Proceedings of the Third Summer School, Held at Szeged, Hungary, August 31 – September 4, 1987

  • Conference proceedings
  • © 1988

Overview

Editors:
  1. G. Ferenczi
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  2. F. Beleznay
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Part of the book series: Lecture Notes in Physics (LNP, volume 301)

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Table of contents (27 papers)

  1. Front Matter

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  2. Integer quantum hall effect

    • J. Hajdu
    Pages 1-18

  3. Theory of the energy loss rate of hot electrons in 2D systems

    • Erich Vass
    Pages 19-25

  4. The transport problem

    • S. Nettel
    Pages 26-38

  5. Cyclotron resonance of quasi-two-dimensional polarons

    • J. T. Devreese, F. M. Peeters
    Pages 39-54

  6. On the concentration dependence of the thermal activation energy of impurities in semicondectors

    • B. Pödör
    Pages 55-60

  7. The use of hydrostatic pressure and alloying to introduce deep levels in the forbidden gap of InSb and GaAS

    • R. A. Stradling
    Pages 61-74

  8. Electronic structure of complex defects in silicon

    • José R. Leite, Lucy V. C. Assali, Vivili M. S. Gomes
    Pages 75-94

  9. Electron microscopy in semiconductor physics

    • J. Heydenreich
    Pages 95-114

  10. Determination of the lateral defect distribution by SDLTS in GaAs

    • László Dózsa, Attila L. Tóth
    Pages 115-119

  11. Formation of ribbon-like defects during low-temperature annealing of Czochralski-grown silicon

    • Manfred Reiche
    Pages 120-125

  12. Band-edge offsets in semiconductor heterojunctions

    • H. Heinrich
    Pages 126-142

  13. Defect dynamics in crystalline and amorphous silicon

    • Sokrates T. Pantelides
    Pages 143-146

  14. On the diffusion of oxygen in a silicon crystal

    • Lawrence C. Snyder, James W. Corbett, Peter Deák, Rongzhi Wu
    Pages 147-156

  15. Hexagonal site interstitial related states in silicon

    • G. Papp, P. Boguslawski, A. Baldereschi
    Pages 157-162

  16. The diffusion and electronic structure of hydrogen in silicon

    • Peter Deák, Lawrence C. Snyder, James W. Corbett
    Pages 163-174

  17. Spectroscopic studies of point defects in silicon and germanium

    • H. G. Grimmeiss, M. Kleverman, K. Bergman, L. Montelius
    Pages 175-200

  18. Deep levels in Cz-Si due to heat treatment at 600...900 °C

    • K. Schmalz, F. -G. Kirscht
    Pages 201-210

  19. Interpretation of the electric field dependent thermal emission data of deep traps

    • T. Pavelka, G. Ferenczi
    Pages 211-215

  20. Electrochemical characterization of GaAs and its multilayer structure materials

    • Peng Rui-wu, Luo Mao-min, Wang Zhou-cheng, Ding Yong-ging, Chen Zi-yao
    Pages 216-231
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About this book

This volume contains selected papers presented at the summer school on semiconductor physics in Szeged (Hungary). They cover the areas of multilayer growth technology, theory of electron states, transport theory, defect related effects and structural properties of semiconductors. The book addresses physicists as well as engineers.

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