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  • © 2003

Current Sense Amplifiers for Embedded SRAM in High-Performance System-on-a-Chip Designs

Authors:

  • Comprehensive theoretical and practical information on current sensing for SRAM is provided in this book for the first time
  • Includes supplementary material: sn.pub/extras

Part of the book series: Springer Series in Advanced Microelectronics (MICROELECTR., volume 12)

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Table of contents (8 chapters)

  1. Front Matter

    Pages I-XV
  2. Introduction

    • Bernhard Wicht
    Pages 1-3
  3. Fundamentals of SRAM and Sensing

    • Bernhard Wicht
    Pages 5-13
  4. Voltage Sense Amplifiers

    • Bernhard Wicht
    Pages 15-37
  5. Circuit Principles for Current Sensing

    • Bernhard Wicht
    Pages 39-80
  6. Interaction with the Memory Cell

    • Bernhard Wicht
    Pages 101-108
  7. Implementation Aspects

    • Bernhard Wicht
    Pages 109-125
  8. Outlook

    • Bernhard Wicht
    Pages 127-127
  9. Back Matter

    Pages 129-164

About this book

System-on-a-chip (SoC) designs result in a wide range of high-complexity, high-value semiconductor products. As the technology scales towards smaller feature sizes and chips grow larger, a speed limitation arises due to an in­ creased RC delay associated with interconnection wires. Innovative circuit techniques are required to achieve the speed needed for high-performance signal processing. Current sensing is considered as a promising circuit class since it is inherently faster than conventional voltage sense amplifiers. How­ ever, especially in SRAM, current sensing has rarely been used so far. Practi­ cal implementations are challenging because they require sophisticated analog circuit techniques in a digital environment. The objective of this book is to provide a systematic and comprehen­ sive insight into current sensing techniques. Both theoretical and practical aspects are covered. Design guidelines are derived by systematic analysis of different circuit principles. Innovative concepts like compensation of the bit­ line multiplexer and auto-power-down will be explained based on theory and experimental results. The material will be interesting for design engineers in industry as well as researchers who want to learn about and apply current sensing techniques. The focus is on embedded SRAM but the material presented can be adapted to single-chip SRAM and to any other current-providing memory type as well. This includes emerging memory technologies like magnetic RAM (MRAM) and Ovonic Unified Memory (OUM). Moreover, it is also applicable to array­ like structures such as CMOS camera chips and to circuits for signal trans­ mission along highly capacitive busses.

Authors and Affiliations

  • Lehrstuhl für Technische Elektronik, Technische Universität München, München, Germany

    Bernhard Wicht

Bibliographic Information

Buy it now

Buying options

eBook USD 84.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book USD 109.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book USD 109.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Other ways to access