GaP Heteroepitaxy on Si(100)

1. Front Matter

   Pages i-xiv

   PDF

2. Introduction

   • Henning Döscher

   Pages 1-5

3. Experimental

   • Henning Döscher

   Pages 7-15

4. Si(100) Surfaces in Chemical Vapor Environments

   • Henning Döscher

   Pages 17-65

5. GaP(100) and InP(100) Surfaces

   • Henning Döscher

   Pages 67-90

6. GaP Growth on Si(100) and Anti-phase Disorder

   • Henning Döscher

   Pages 91-140

7. Conclusion

   • Henning Döscher

   Pages 141-143

Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroepitaxial growth surface provides quantitative optical in situ access to one of the most notorious defect mechanisms, even in the vapor phase ambient common for compound semiconductor technology. Precise control over the surface structure of the Si(100) substrates prior to III-V nucleation prevents the formation of antiphase domains. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration.

• Anti-phase Disorder
• III-V Semiconductor Heteroepitaxy on Silicon Substrates
• In Situ Reflectance Anisotropy Spectroscopy
• Lattice-matched Growth
• Materials for Photovoltaics
• Metal-organic Vapor Phase Epitaxy
• Polar on Non-polar Interface

• FG Photovoltaik, TU Ilmenau Institut f. Physik, Ilmenau, Germany

  Henning Döscher

Dr. Henning Döscher
TU Ilmenau
Institut für Physik, FG Photovoltaik
Ehrenbergstr. 29
98693 Ilmenau

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