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Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors

  • Book
  • © 1989

Overview

Editors:
  1. T. C. McGill

    1. California Institute of Technology, Pasadena, USA

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  2. C. M. Sotomayor Torres

    1. University of Glasgow, Glasgow, UK

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  3. W. Gebhardt

    1. University of Regensburg, Regensburg, Federal Republic of Germany

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Part of the book series: NATO Science Series B: (NSSB, volume 200)

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Table of contents (33 chapters)

  1. Front Matter

    Pages i-xi
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  2. Prospects and Considerations for Wide Gap II-VI Devices

    1. Optoelectronic Devices from Wide Band Gap II-VI Semiconductors

      • R. N. Bhargava
      Pages 1-9

    2. Recent Development Trends in Thin Film Electroluminescent Displays

      • Runar Törnqvist
      Pages 11-21

    3. Considerations for Blue-Green Optoelectronics Based on Epitaxial ZnSe/ZnS

      • K. P. O’Donnell, B. Henderson
      Pages 23-27

    4. Blue Electroluminescent Devices Based on Low Resistive p-Type ZnSe

      • N. Stücheli, E. Bucher
      Pages 29-37

    5. Prospects for II-VI Heterojunction Light Emitting Diodes

      • J. O. McCaldin
      Pages 39-51

    6. II-VI Heterostructures and Multi-Quantum Wells

      • T. C. McGill, R. H. Miles, Y. Rajakarunanayake, J. O. McCaldin
      Pages 53-65

  3. 3D Growth of Wide-Gap II-VI Semiconductors

    1. A Review of the Growth of 3D II-VI Compounds

      • B. J. Fitzpatrick
      Pages 67-73

    2. The Growth of Thin Layers by MOCVD of Wide Band Gap II-VI Compounds

      • B. Cockayne, P. J. Wright
      Pages 75-85

    3. Optical Studies of ZnXTe(X=Mn,Hg) Alloys

      • Philippe Lemasson, Chau Nguyen Van Huong
      Pages 87-95

    4. Electrical and Structural Properties of Wide Bandgap II-VI Semiconducting Compounds

      • A. W. Brinkman
      Pages 97-107

  4. Excitons, Doping and Impurities in Wide Gap II-VI Semiconductors

    1. Some Aspects of Impurities in Wide Band Gap II-VI Compounds

      • H.-E. Gumlich
      Pages 109-118

    2. Conductivity Control of Wide Gap II-VI Compounds

      • Hiroshi Kukimoto
      Pages 119-127

    3. Photoassisted Doping of II-VI Semiconductor Films

      • J. F. Schetzina, N. C. Giles, S. Hwang, R. L. Harper
      Pages 129-137

    4. Excitonic Complexes in Wide-Gap II-VI Semiconductors

      • J. Gutowski
      Pages 139-148

    5. Optical Properties of Bulk II-VI Semiconductors: Effect of Shallow Donor States

      • E. Kartheuser
      Pages 149-166

  5. Non-Linear Optical Properties of Wide Gap II-VI Semiconductors

    1. Review of Nonlinear Optical Processes in Wide Gap II-VI Compounds

      • C. Klingshirn, M. Kunz, F. A. Majumder, D. Oberhauser, R. Renner, M. Rinker et al.
      Pages 167-181

    2. Optical Nonlinearities, Coherence and Dephasing in Wide Gap II-VI Semiconductors

      • Jørn M. Hvam, Claus Dörnfeld
      Pages 183-191

    3. Frequency Dependence of Interband Two-Photon Absorption Mechanisms in ZnO and ZnS

      • I. M. Catalano, A. Cingolani, M. Lepore
      Pages 193-198

    4. II-VI Semiconductor-Doped Glass: Nonlinear Optical Properties and Devices

      • C. N. Ironside
      Pages 199-207
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Keywords

About this book

This volume contains the Proceedings of the NATO Advanced Research Workshop on "Growth and Optical Properties of Wide Gap II-VI Low Dimensional Semiconductors", held from 2 - 6 August 1988 in Regensburg, Federal Republic of Germany, under the auspices of the NATO International Scientific Exchange Programme. Semiconducting compounds formed by combining an element from column II of the periodic table with an element from column VI (so called II-VI Semiconductors) have long promised many optoelectronic devices operating in the visible region of the spectrum. However, these materials have encountered numerous problems including: large number of defects and difficulties in obtaining p- and n-type doping. Advances in new methods of material preparation may hold the key to unlocking the unfulfilled promises. During the workshop a full session was taken up covering the prospects for wide-gap II-VI Semiconductor devices, particularly light emitting ones. The growth of bulk materials was reviewed with the view of considering II-VI substrates for the novel epitaxial techniques such as MOCVD, MBE, ALE, MOMBE and ALE-MBE. The controlled introduction of impurities during non-equilibrium growth to provide control of the doping type and conductivity was emphasized.

Editors and Affiliations

  • California Institute of Technology, Pasadena, USA

    T. C. McGill

  • University of Glasgow, Glasgow, UK

    C. M. Sotomayor Torres

  • University of Regensburg, Regensburg, Federal Republic of Germany

    W. Gebhardt

Bibliographic Information

  • Book Title: Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors

  • Editors: T. C. McGill, C. M. Sotomayor Torres, W. Gebhardt

  • Series Title: NATO Science Series B:

  • DOI: https://doi.org/10.1007/978-1-4684-5661-5

  • Publisher: Springer New York, NY

  • eBook Packages: Springer Book Archive

  • Copyright Information: Plenum Press, New York 1989

  • Hardcover ISBN: 978-0-306-43221-7Due: 01 August 1989

  • Softcover ISBN: 978-1-4684-5663-9Published: 25 February 2012

  • eBook ISBN: 978-1-4684-5661-5Published: 06 December 2012

  • Series ISSN: 0258-1221

  • Edition Number: 1

  • Number of Pages: 349

  • Topics: Applied and Technical Physics, Optical and Electronic Materials

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