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Nanometer Variation-Tolerant SRAM

Circuits and Statistical Design for Yield

  • Book
  • © 2013

Overview

  • Provides comprehensive review of state-of-the-art, variation-tolerant SRAM circuit techniques
  • Discusses Impact of device related process variations and how they affect circuit and system performance, from a design point of view
  • Helps designers optimize memory yield, with practical statistical design methodologies and yield estimation techniques
  • Includes supplementary material: sn.pub/extras

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Table of contents (6 chapters)

Keywords

About this book

Variability is one of the most challenging obstacles for IC design in the nanometer regime.  In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost, while achieving higher performance and density.  With the drastic increase in memory densities, lower supply voltages, and higher variations, statistical simulation methodologies become imperative to estimate memory yield and optimize performance and power.

This book is an invaluable reference on robust SRAM circuits and statistical design methodologies for researchers and practicing engineers in the field of memory design. It combines state of the art circuit techniques and statistical methodologies to optimize SRAM performance and yield in nanometer technologies.  

  • Provides comprehensive review of state-of-the-art, variation-tolerant SRAM circuit techniques;
  • Discusses Impact of device related process variations and how they affect circuit and system performance, from a design point of view;
  • Helps designers optimize memory yield, with practical statistical design methodologies and yield estimation techniques.

Authors and Affiliations

  • Qualcomm Incorporated, San Diego, USA

    Mohamed H. Abu-Rahma

  • The American University in Cairo, Electronics Engineering Department, School of Sciences and Engineering, New Cairo, Egypt

    Mohab Anis

Bibliographic Information

  • Book Title: Nanometer Variation-Tolerant SRAM

  • Book Subtitle: Circuits and Statistical Design for Yield

  • Authors: Mohamed H. Abu-Rahma, Mohab Anis

  • DOI: https://doi.org/10.1007/978-1-4614-1749-1

  • Publisher: Springer New York, NY

  • eBook Packages: Engineering, Engineering (R0)

  • Copyright Information: Springer Science+Business Media New York 2013

  • Hardcover ISBN: 978-1-4614-1748-4

  • Softcover ISBN: 978-1-4939-0220-0

  • eBook ISBN: 978-1-4614-1749-1

  • Edition Number: 1

  • Number of Pages: XVI, 172

  • Topics: Circuits and Systems, Computer-Aided Engineering (CAD, CAE) and Design

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