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Low-Power Deep Sub-Micron CMOS Logic

Sub-threshold Current Reduction

  • Book
  • © 2004

Overview

Authors:
  1. P. R. Meer

    1. Delft University of Technology, Delft, The Netherlands

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  2. A. Staveren

    1. National Semiconductor Corporation, Delft, The Netherlands

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  3. A. H. M. Roermund

    1. Eindhoven University of Technology, Eindhoven, The Netherlands

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  • Classifies all power dissipation sources in digital CMOS circuits
  • Provides for a systematic approach of power reduction techniques
  • A clear distinction between power dissipated to perform a calculation in a certain time frame, i.e. functional power dissipation, and power dissipated even when a circuit is idle, i.e. parasitical power dissipation
  • Power dissipation is discussed from a fundamental, quantum mechanical and a practical point of view
  • Theory is accompanied with practical circuit implementations and measurement results

Part of the book series: The Springer International Series in Engineering and Computer Science (SECS, volume 841)

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Table of contents (10 chapters)

  1. Front Matter

    Pages i-xiv
    Download chapter PDF

  2. Introduction

    • P. R. van der Meer, A. van Staveren, A. H. M. van Roermund
    Pages 1-4

  3. Power Versus Energy

    • P. R. van der Meer, A. van Staveren, A. H. M. van Roermund
    Pages 5-9

  4. Power Dissipation in Digital CMOS Circuits

    • P. R. van der Meer, A. van Staveren, A. H. M. van Roermund
    Pages 11-52

  5. Reduction of Functional Power Dissipation

    • P. R. van der Meer, A. van Staveren, A. H. M. van Roermund
    Pages 53-75

  6. Reduction of Parasitical Power Dissipation

    • P. R. van der Meer, A. van Staveren, A. H. M. van Roermund
    Pages 77-91

  7. Weak-Inversion Current Reduction

    • P. R. van der Meer, A. van Staveren, A. H. M. van Roermund
    Pages 93-104

  8. Effectiveness of Weak-Inversion Current Reduction

    • P. R. van der Meer, A. van Staveren, A. H. M. van Roermund
    Pages 105-120

  9. Triple-S Circuit Designs

    • P. R. van der Meer, A. van Staveren, A. H. M. van Roermund
    Pages 121-138

  10. Conclusions

    • P. R. van der Meer, A. van Staveren, A. H. M. van Roermund
    Pages 139-140

  11. Summary

    • P. R. van der Meer, A. van Staveren, A. H. M. van Roermund
    Pages 141-144

  12. Back Matter

    Pages 145-154
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Keywords

About this book

1. 1 Power-dissipation trends in CMOS circuits Shrinking device geometry, growing chip area and increased data-processing speed performance are technological trends in the integrated circuit industry to enlarge chip functionality. Already in 1965 Gordon Moore predicted that the total number of devices on a chip would double every year until the 1970s and every 24 months in the 1980s. This prediction is widely known as "Moore's Law" and eventually culminated in the Semiconductor Industry Association (SIA) technology road map [1]. The SIA road map has been a guide for the in­ dustry leading them to continued wafer and die size growth, increased transistor density and operating frequencies, and defect density reduction. To mention a few numbers; the die size increased 7% per year, the smallest feature sizes decreased 30% and the operating frequencies doubled every two years. As a consequence of these trends both the number of transistors and the power dissi­ pation per unit area increase.In the near future the maximum power dissipation per unit area will be reached. Down-scaling of the supply voltage is not only the most effective way to reduce power dissipation in general it also is a necessary precondition to ensure device reliability by reducing electrical fields and device temperature, to prevent device degradation. A draw-back of this solution is an increased signal propa­ gation delay, which results in a lower data-processing speed performance.

Authors and Affiliations

  • Delft University of Technology, Delft, The Netherlands

    P. R. Meer

  • National Semiconductor Corporation, Delft, The Netherlands

    A. Staveren

  • Eindhoven University of Technology, Eindhoven, The Netherlands

    A. H. M. Roermund

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