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UV Solid-State Light Emitters and Detectors

  • Conference proceedings
  • © 2004

Overview

Editors:
  1. Michael S. Shur

    1. Rensselaer Polytechnic Institute, Troy, USA

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    You can also search for this editor in PubMed   Google Scholar

  2. Artūras Žukauskas

    1. Vilnius University, Vilnius, Lithuania

    View editor publications

    You can also search for this editor in PubMed   Google Scholar

Part of the book series: NATO Science Series II: Mathematics, Physics and Chemistry (NAII, volume 144)

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Table of contents (26 papers)

  1. Front Matter

    Pages i-xiv
    Download chapter PDF

  2. Basic Device Issues in UV Solid-State Emitters and Detectors

    • M. S. Shur, A. Žukauskas
    Pages 1-13

  3. HVPE-Grown AlN-GaN Based Structures for UV Spectral Region

    • A. S. Usikov, Yu. Melnik, A. I. Pechnikov, V. A. Soukhoveev, O. V. Kovalenkov, E. Shapovalova et al.
    Pages 15-29

  4. GaN-Based Laser Diodes

    • S. Einfeldt, S. Figge, T. BÖttcher, D. Hommel
    Pages 31-39

  5. Quaternary AlInGaN Materials System for UV Optoelectronics

    • E. Kuokstis, G. Tamulaitis, M. Asif Khan
    Pages 41-58

  6. III-Nitride Based UV Light Emiting Diodes

    • R. Gaska, M. Asif Khan, M. S. Shur
    Pages 59-75

  7. UV Metal Semiconductor Metal Detectors

    • J.-L. Reverchon, M. Mosca, N. Grandjean, F. Omnes, F. Semond, J.-Y. Duboz et al.
    Pages 77-92

  8. Characterization of Advanced Materials for Optoelectronics by Using UV Lasers and Four-Wave Mixing Techniques

    • K. Jarašiūnas
    Pages 93-109

  9. Quantum Phospors

    • A. P. Vink, E. Van Der Kolk, P. Dorenbos, C. W. E. Van Eijk
    Pages 111-126

  10. Optical Measurements Using Light-Emitting Diodes

    • A. Žukauskas, M. S. Shur, R. Gaska
    Pages 127-142

  11. Novel Algan Heterostructures for UV Sensors and Leds

    • M. Stutzmann
    Pages 143-159

  12. Nitride Photodetectors in UV Biological Effects Studies

    • E. Muñoz, J. L. Pau, C. Rivera
    Pages 161-177

  13. Promising Results of Plasma Assisted MBE for Optoelectronic Applications

    • A. Georgakilas, E. Dimakis, K. Tsagaraki, M. Androulidaki
    Pages 179-188

  14. Low Dislocations Density GaN/Sapphire for Optoelectronic Devices

    • B. Beaumont, J.-P. Faurie, E. Frayssinet, E. Aujol, P. Gibart
    Pages 189-197

  15. Stimulated Emission and Gain in GaN Epilayers Grown on Si

    • A. L. Gurskii, E. V. Lutsenko, V. Z. Zubialevich, V. N. Pavlovskii, G. P. Yablonskii, K. Kazlauskas et al.
    Pages 199-206

  16. Materials Characterization of Group-III Nitrides under High-Power Photoexcitation

    • S. Juršėnas, G. Kurilčik, S. Miasojedovas, A. Žukauskas
    Pages 207-214

  17. Small Internal Electric Fields in Quaternary InAlGaN Heterostructures

    • S. Anceau, S. P. Łepkowski, H. Teisseyre, T. Suski, P. Perlin, P. Lefebvre et al.
    Pages 215-222

  18. MOCVD Growth of AlGaN Epilayers and AlGaN/GaN SLs in a Wide Composition Range

    • W. V. Lundin, A. V. Sakharov, A. F. Tsatsul’nikov, E. E. Zavarin, A. I. Besulkin, A. V. Fomin et al.
    Pages 223-231

  19. Gallium Nitride Schottky Barriers and MSM UV Detectors

    • B. Boratynski, M. Tlaczala
    Pages 233-238

  20. III-Nitride Based Ultraviolet Surface Acoustic Wave Sensors

    • D. Čiplys, A. Sereika, R. Rimeika, R. Gaska, M. Shur, J. Yang et al.
    Pages 239-246
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Keywords

About this book

Infrared and visible light LEDs and photodetectors have found numerous applications and have become a truly enabling technology. The promise of solid state lighting has invigorated interest in white light LEDs. Ultraviolet LEDs and solar blind photodetectors represent the next frontier in solid state emitters and hold promise for many important applications in biology, medi­ cine, dentistry, solid state lighting, displays, dense data storage, and semi­ conductor manufacturing. One of the most important applications is in sys­ tems for the identification of hazardous biological agents. Compared to UV lamps, UV LEDs have lower power consumption, a longer life, compactness, and sharper spectral lines. UV LEDs can provide a variety of UV spectra and have shape and form factor flexibility and rugged­ ness. Using conventional phosphors, UV LEDs can generate white light with high CRI and high efficiency. If quantum cutter phosphors are developed, white light generation by UV LEDs might become even more efficient. Advances in semiconductor materials and in improved light extraction techniques led to the development of a new generation of efficient and pow­ erful visible high-brightness LEDs and we expect that similar improvements will be achieved in solid-state UV technology.

Editors and Affiliations

  • Rensselaer Polytechnic Institute, Troy, USA

    Michael S. Shur

  • Vilnius University, Vilnius, Lithuania

    Artūras Žukauskas

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