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Fully-Depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications

  • Book
  • © 2006

Overview

Authors:
  1. Takayasu Sakurai

    1. Center for Collaborative Research, and Institute of Industrial Science, University of Tokyo, Japan

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  2. Akira Matsuzawa

    1. Tokyo Institute of Technology, Japan

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  3. Takakuni Douseki

    1. NTT Corporation, NTT Microsystem Integration Labs, Japan

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  • Systematically covers ultralow-power circuit-design methods for FD-SOI devices
  • Ultralow-voltage circuits including analog/RF circuits, and DC-DC converters are described in addition to digital circuits
  • Three examples of ultralow-power wireless systems are demonstrated to verify the effectiveness of FD-SOI technology

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Table of contents (8 chapters)

  1. Front Matter

    Pages i-xiii
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  2. Introduction

    • Makoto Yoshimi
    Pages 1-22

  3. FD-SOI Device and Process Technologies

    • Hideaki Matsuhashi
    Pages 23-81

  4. Ultralow-Power Circuit Design with FD-SOI Devices

    • Akira Matsuzawa
    Pages 83-129

  5. 0.5-V MTCMOS/SOI Digital Circuits

    • Takakuni Douseki
    Pages 131-211

  6. 0.5-1V MTCMOS/SOI Analog/RF Circuits

    • Tsuneo Tsukahara
    Pages 213-306

  7. SPICE Model for SOI MOSFETs

    • Shunsuke Baba
    Pages 307-335

  8. Applications

    • Takakuni Douseki
    Pages 337-365

  9. Prospects for FD-SOI Technology

    • Tohru Mogami
    Pages 367-404

  10. Back Matter

    Pages 405-411
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About this book

5. 2 RF Building Blocks. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 214 5. 2. 1 Piezoelectric Oscillators. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215 5. 2. 2 Voltage Reference Generator. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220 5. 2. 3 Transmit/Receive Switches. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 224 5. 2. 4 Low-Noise Amplifiers (LNAs). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 226 5. 2. 5 Power Amplifiers (PAs). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 228 5. 2. 6 Mixers and Image-Rejection Receiver . . . . . . . . . . . . . . . . . . . . . . . . 230 5. 2. 7 Voltage-Controlled Oscillator (VCO). . . . . . . . . . . . . . . . . . . . . . . . . . 242 5. 2. 8 Limiting Amplifiers. . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 248 5. 2. 9 gm-C Filters. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 5. 3 A/D and D/A Converters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 254 5. 3. 1 Cyclic A/D Converter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 255 5. 3. 2 Sigma-Delta A/D Converter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 264 5. 3. 3 Current-Steering D/A Converter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 270 5. 4 DC-DC Converter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 276 5. 4. 1 Design of DC-DC Converter . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . 276 5. 4. 2 Switched-Capacitor (SC)-Type Converter. . . . . . . . . . . . . . . . . . . 276 5. 4. 3 Buck Converter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 279 5. 4. 4 Applicable Zones for SC-Type and Buck Converters. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 283 5. 4. 5 On-chip Distributed Power Supplies for Ultralow-Power LSIs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 285 5. 5 I/O and ESD-Protection Circuitry for Ultralow-Power LSIs . . 291 5. 5. 1 Standard Interface Trends. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 291 5. 5. 2 Problems with I/O Circuits for 0. 5-V/3. 3-V Conversion. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . 292 5. 5. 3 Guidelines for Design of Interface Circuits. . . . . . . . . . . . . . . . . 293 5. 5. 4 Performance of I/O Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 297 5. 5. 5 ESD Protection with FD-SOI Devices . . . . . . . . . . . . . . . . . . . . . . . . 298 5. 5. 6 Design and Layout Requirements for ESD Protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 5. 6 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 303 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 304 viii 6. SPICE Model for SOI MOSFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . 307 6. 1 Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 307 6. 2 SPICE Model for SOI MOSFETs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 307 6. 3 Parameter Extraction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 309 6. 4 Example of SOI MOSFET Simulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Authors and Affiliations

  • Center for Collaborative Research, and Institute of Industrial Science, University of Tokyo, Japan

    Takayasu Sakurai

  • Tokyo Institute of Technology, Japan

    Akira Matsuzawa

  • NTT Corporation, NTT Microsystem Integration Labs, Japan

    Takakuni Douseki

About the authors

Takayasu Sakurai received the Ph.D degree in Electronic Engineering from University of Tokyo, Japan, in 1981 and he joined Toshiba Corporation, where he designed CMOS DRAM, SRAM, BiCMOS ASIC's, RISC's, and multimedia VLSI's. He worked on simple yet accurate interconnect delay, capacitance and MOS models widely used as alpha power-law MOS model. He proposed to sense-amplifying flip-flops, variable threshold voltage CMOS scheme, dual voltage converter scheme, hot carrier resilient circuits and other numerous digital and memory circuits, which are adopted in current high-performance, low-power VLSI's. He was a visiting researcher at University of California, Berkeley from 1988 to 1990. In 1996, he moved to University of Tokyo and is consulting to US startup companies. He has published about 250 technical publications including more than 30 invited papers and 6 books and filed about 100 patents. He is a recipient of four product awards and two design contest awards. He served as a conference chair for the Symposium on VLSI Circuits, and a technical program committee member for ISSCC, CICC, DAC, ICCAD, FPGA workshop, ISLPED, ASPDAC, TAU, and other international conferences. He is a keynote speaker for the 2003 ISSCC. He is an IEEE Fellow, an elected Administration Committee member for the IEEE Solid-State Circuits Society and an IEEE CAS distinguished lecturer.

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